Allicdata Part #: | TK4A55DA(STA4QM)-ND |
Manufacturer Part#: |
TK4A55DA(STA4,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 550V 3.5A TO-220SIS |
More Detail: | N-Channel 550V 3.5A (Ta) 30W (Tc) Through Hole TO-... |
DataSheet: | TK4A55DA(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
Series: | π-MOSVII |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 550V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.45 Ohm @ 1.8A, 10V |
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TK4A55DA is aSTA4QM, deterministic transistor used for businesses, commercial and consumer applications. It is a specialized type of field-effect transistor often referred to as a MOSFET (metal oxide semiconductor field-effect transistor).
As a single device, this transistor is an ideal choice for switchmode power supplies, lighting applications, and various consumer electronics. The TK4A55DA can also be used in multiple cooler designs and other critical components associated with mobile phones, computers, and gaming systems. The device offers a level of flexibility by allowing users to select the desired current within a wide range of up to 75 A.
The TK4A55DA device offers a data sheet with extremely simple and explicit information. It includes parameters such as gate threshold, on resistance, drain capacitance, drain current, and pulse type ratings. It also encloses a forward gate drive voltage, maximum total gate charge, parasitic diode forward voltage, turn-off delay time and the power template.
The working principle of the TK4A55DA is based on the principle of operation of the MOSFET. This type of transistor works by using a conducting channel between the source and drain to carry current. When an electric field is applied to the gate and a potential is created between the gate and the source, the electrons from the source form a conducting channel and the current carrying capability between source and drain will directly depend on the gate voltage. This allows the current to be controlled by varying the gate voltage to turn the current “on” and “off”.
The main advantage of the TK4A55DA is its robust structure. It is an extremely rugged device, designed to withstand harsh conditions for extended periods of time. This results in a reliable and consistent performance in high temperature, vibration, and shock environments. Additionally, due to its low on-resistance and low gate charge, it requires little input from external circuitry.
In addition to its applications in switchmode power supplies, lighting applications and consumer electronics, the TK4A55DA can also be used in electronic ballast, automotive applications, and motor-drive systems. Furthermore, it supports a wide range of operating temperatures, giving it the capability to function at extreme temperatures, which makes it ideal for industrial, automotive, and other high-temperature applications.
In summary, the TK4A55DA is a STA4QM transistor with a wide range of applications and a high degree of flexibility. It offers low on-resistance, low gate charge and a wide temperature operating range, making it an ideal choice for switchmode power supplies, lighting applications and consumer electronics. Its robust structure, high temperature operating range and low input from external circuitry all make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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