Allicdata Part #: | TK4A65DA(STA4QM)-ND |
Manufacturer Part#: |
TK4A65DA(STA4,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 650V 3.5A TO-220SIS |
More Detail: | N-Channel 650V 3.5A (Ta) 35W (Tc) Through Hole TO-... |
DataSheet: | TK4A65DA(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | π-MOSVII |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A field effect transistor (FET), is a type of transistor that works by using an electric charge to control the movement of electrons between source and drain terminals. The TK4A65DA is a field effect transistor specifically of the Metal Oxide Semiconductor (MOSFET) type. It is a single-gate MOSFET, with a drain current of 157 A, breakdown voltage of 150 V, and very low RDS(on).
The TK4A65DA employs a number of different technologies in its design, including discrete nitrides, borderless cells and low resistance contact structures. The primary purpose of these technologies is to reduce the resistance of the connection between the source and drain terminals and to increase the drain current capability. By employing these technologies, the on-state resistance (RDS(on)) is significantly reduced, allowing for greater power efficiency and operating performance.
The working principle of the TK4A65DA FET is based on the idea that a channel of electrons between the source and drain terminals can be controlled through the application of an electric field. When the gate voltage is increased, the electric field increases and the channel of electrons is widened, allowing for a higher current. Conversely, when the gate voltage is decreased, the electric field is reduced and the channel of electrons is narrowed, allowing for less current. When an appropriate gate voltage is provided, the electrical resistance between the source and drain terminals becomes very low, allowing for a large amount of current to flow.
The TK4A65DA FET can be used in a variety of applications, from high frequency switching to motor control. In motor control applications, the TK4A65DA can be used to drive motor wiring and help to control motor speed and torque. The FET can also be used for power conversion applications, converting direct current (DC) into alternating current (AC), as well as applications requiring very low voltage and very high current.
Overall, the TK4A65DA FET is a versatile and powerful field effect transistor that is well-suited for a variety of different applications. Its small size, high drain current and low RDS(on) make it ideal for high frequency switching and motor control applications, while its power conversion capability makes it suitable for power conversion projects.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK4A60D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A TO-22... |
TK4A60DA(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.5A TO2... |
TK4A50D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 4A TO-22... |
TK4A53D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 525V 4A TO-22... |
TK4A55DA(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 550V 3.5A TO-... |
TK4A55D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 550V 4A TO-22... |
TK4A60DB(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.7A TO-... |
TK4A65DA(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 650V 3.5A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...