TN2501N8-G Allicdata Electronics
Allicdata Part #:

TN2501N8-G-ND

Manufacturer Part#:

TN2501N8-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 18V 400MA SOT89-3
More Detail: N-Channel 18V 400mA (Tj) 1.6W (Tc) Surface Mount T...
DataSheet: TN2501N8-G datasheetTN2501N8-G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: TO-243AA
Supplier Device Package: TO-243AA (SOT-89)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 200mA, 3V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 3V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tj)
Drain to Source Voltage (Vdss): 18V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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TN2501N8-G is a field effect transistor (FET) designed specifically for switching operations such as those used in power converters. It is a high power FET usually used for applications such as DC-DC converters, switching power supplies, and motor control systems. This FET is a three-terminal device with an integrated gate structure which allows it to be easily controlled with low gate voltages. It also has a fast switching speed which makes it suitable for high frequency applications. In this article, we will discuss the application fields and working principles of TN2501N8-G field effect transistors.

Applications of TN2501N8-G

TN2501N8-G is most commonly used in DC-DC converters and motor control systems due to its high power capacity and fast switching speed. DC-DC converters use this FET to boost or buck the output voltage, ensuring that the voltage is within the desired range for the particular application. Additionally, this FET can be also used for AC-DC converters and servo control systems. The TN2501N8-G can provide higher efficiency and more reliable performance compared to some other devices.

Working Principle of TN2501N8-G

TN2501N8-G is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is composed of an integrated gate structure which makes it possible to control the current easily using a low gate voltage. The MOSFET works based on the principle of quantum tunneling, which states that when electrons move through a barrier they are capable of tunneling through it, as if it were never there. In the case of the TN2501N8-G, the electrons can be controlled by modifying the gate voltage, allowing the current to flow or be blocked, depending on the voltage applied.

Advantages of TN2501N8-G

The main advantage of the TN2501N8-G is its high power capability and fast switching speeds. This makes it well suited for high frequency operations such as DC-DC converters and switching power supplies. It offers higher efficiency and more reliable performance compared to other devices, making it an ideal choice for applications which require higher efficiency. Additionally, it has a low gate-source capacitance which minimizes the effect of switching on the output signal.

Conclusion

TN2501N8-G is a powerful field effect transistor designed for switching operations such as those used in power converters. It has an integrated gate structure which enables it to be controlled by a low gate voltage and its fast switching speed makes it suitable for high frequency applications. This FET is commonly used for DC-DC converters, AC-DC converters and servo control systems due to its high power capacity and efficient performance.

The specific data is subject to PDF, and the above content is for reference

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