TN2510N8-G Discrete Semiconductor Products

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The TN2510N8-G is a wide band gap (WBG) ROOKSOFET manufactured by Toshiba featuring high breakdown voltage, low on-state resistance, and fast switching speeds. The ROOKSOFET technology employed is a type of Revolutionized Oxide-semiconductor field effect transistor (RESFET), with a wide band gap of 3.2 eV, making it an ideal choice for high temperature and high breakdown voltage applications. This transistor comes in two different packages, the TN2510N8-G-S and the TN2510N8-G-D.

The TN2510N8-G is typically used as a high-side switch in power MOSFET applications due to its high voltage rating and low on-state resistance. It is also suitable for for high temperature power management applications, such as LED drivers and solar arrays. The TN2510N8-G can also be used in automotive and industrial applications due to its high energy efficiency, low on-state voltage, and fast switching speed.

The working principle of the TN2510N8-G is based on the field effect transistor (FET) mechanism, which relies on a voltage applied to the gate to modulate the flow of current between two terminals. When a positive voltage is applied to the gate, a channel is created between the two terminals, allowing current to flow between them. The flow of current is governed by the resistance of the gate-source junction, which can be modulated by varying the voltage of the gate.

The TN2510N8-G is a popular choice for high temperature and high voltage applications due to its wide band gap and low on-state resistance. The device can operate in temperatures up to 150 degrees Celsius and has a maximum voltage of 100V, making it ideal for automotive and industrial applications. Additionally, the device features a high switching speed, which makes it suitable for high frequency applications.

In conclusion, the TN2510N8-G is a wide band gap ROOKSOFET manufactured by Toshiba, featuring a high breakdown voltage, low on-state resistance and fast switching speeds. This transistor is typically employed as a high-side switch in power MOSFET applications, due to its high voltage rating, low on-state resistance, and fast switching speed. The device is suitable for automotive and industrial applications due to its wide band gap and high temperature rating, as well as its ability to operate in high temperatures and high voltages.

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