TN2524N8-G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-243AA
Supplier Device Package:	TO-243AA (SOT-89)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	125pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	6 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	360mA (Tj)
Drain to Source Voltage (Vdss):	240V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The TN2524N8-G is a power metal-oxide-semiconductor field-effect transistor (MOSFET) which is widely used in the electronics industry for various applications. It is available in a single-channel package and has a drain-to-source voltage of 25 Volts, a drain current of 2.5 Amps and a channel temperature of 175°C. This MOSFET is designed to be used in a variety of applications, ranging from audio amplifiers and motor controllers to solar inverters and LED lighting systems.The TN2524N8-G works on the principle of field-effect tunneling. This is based on the phenomenon that when an electric field is applied to a semiconductor material, a narrow, direct tunneling path is established between the source and drain electrodes. This path enables high current flows between the source and drain electrodes.The TN2524N8-G is most often used for applications such as switching and amplification. It can be used to control the current flowing in and out of the device, allowing for higher current capability and faster switching speeds than can be achieved with a standard transistor. Furthermore, the device can provide a low on-resistance and drive capability, making it suitable for high-temperature operation and high power consumption applications.The TN2524N8-G is most commonly used in logic-level switching, providing fast switching speeds and high level of accuracy. The device is also well-suited for use in audio amplification applications, as it provides superior signal-to-noise ratio over other power FETs. It can also be used in high current, low noise motor control applications, such as motor speed controllers and motor drives. Finally, the device can also be used in high temperature, low noise applications such as lighting systems and solar inverters.In conclusion, the TN2524N8-G is a versatile MOSFET which is used in a variety of applications. It is available in a single-channel package and has a drain-to-source voltage of 25 Volts, a drain current of 2.5 Amps and a channel temperature of 175°C. It works on the principle of field-effect tunneling which enables high current flow between the source and drain electrodes. The device is most often used for applications such as logic-level switching, audio amplification, motor control and high temperature, low noise operations.

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