TN2504N8-G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TN2504N8-G is a part of a family of single, N-channel MOSFETs introduced by Toshiba. The device has been designed to provide enhanced performance in a variety of power supply management and basic switching applications. MOSFETs are transistors that are specifically designed to provide maximum power-handling capacities while maintaining an ultralow on-resistance. They are used in many modern electronic applications including switching power supplies, solar inverters, display backlighting, and more. This article will discuss the TN2504N8-G transistor and its various applications as well as its working principle.

TN2504N8-G Characteristics

The TN2504N8-G transistor is made using the Advanced Technology Device large area metal–oxide–semiconductor (ATMOS) process. This procedure ensures stability and devices with a “cutoff voltage” of 4.5 V. This feature provides lots of headroom when matching supply rail voltages of high-power applications. The “cutoff voltage” refers to the voltage at which the MOSFET switches off so it is an important feature in power supply design. The TN2504N8-G MOSFET has an RDSon (“on” resistance) of 4.25 mOhm at 10 V, which makes it a great choice for applications where low power losses are desirable. It also has a high-input capacitance, which can help to stabilize power supply switching applications. The part also has temperature protection and AEC-Q101 qualification.

TN2504N8-G Application Field

The TN2504N8-G is available in several different packages which provide flexibility for different types of application. The part is suitable for use as a main switch in low-side regulation applications. It is a great choice for switch-mode power supplies, voltage regulation, and power factor correction. The TN2504N8-G MOSFET can also be used in high-performance motor controllers and DC-DC converters. In general, it is well suited for any application that requires low loss, high-power switching.

TN2504N8-G Working Principle

The TN2504N8-G is a MOSFET based transistor that uses the TO-220F package. This package offers many advantages including low, self-heating power losses and excellent thermal coupling characteristics. The device is an N-type transistor, which means that when voltage is applied to the gate it creates an electric field. This electric field creates a barrier at the source-drain junction. Current is only able to flow through the MOSFET when the gate voltage is increased to a certain level. This threshold voltage is called the threshold voltage (Vth). When the gate voltage is increased above the Vth, the MOSFET enters its “on” state and current is able to flow through it. One of the main features of MOSFET devices is their low on-state resistance, which allows them to pass large amounts of current with minimal losses.

Conclusion

The Toshiba TN2504N8-G is a single, N-channel MOSFET designed to provide optimized performance in a variety of power supply management and basic switching applications. The device’s low on-resistance and high-input capacitance make it an optimal choice for applications that require low power losses and stable operation. The device offers temperature protection, AEC-Q101 qualification, and can be utilized in switch-mode power supplies, voltage regulation, motor controllers, and more.

The specific data is subject to PDF, and the above content is for reference