TN2540N3-G

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TN2540N3-G is a single N-Channel enhancement mode MOSFET field effect transistor, which is beneficial in numerous electronic devices due to its versatile nature. This article describes its application field and working principle.

Overview

The TN2540N3-G is an enhancement-mode MOSFET device with a N-Channel structure. It has a maximum drain-source voltage of 200 volts. Its maximum drain current is 40 amps and its maximum drain-source on-state resistance is 6 milli-ohms. Additionally, it has a maximum power dissipation of 223 W at a 25°C ambient temperature. The TN2540N3-G is equipped with a fast switching speed, making it an ideal choice for high speed applications. Additionally, it provides excellent temperature stability.

Application Field

The TN2540N3-G is used in a variety of applications, such as in DC-DC converters, motor speed control, high current switches, and uninterruptible power supplies. Additionally, it is used in a variety of consumer and industrial electronic devices, including batteries, automatic windows, and computers. Its excellent temperature stability also makes it ideal for applications in harsh environments.

Working Principle

The TN2540N3-G operates on an N-Channel structure. The gate and source terminals are connected to an electric circuit and power source, then the transistor is turned on and an electric current passes from one end to the other. The basic operating principle of the TN2540N3-G is the same as that of all transistors. In an N-Channel type device, the flow of current can be regulated by the gate voltage, which allows the user to control the current flow.

The transistor is equipped with a positive gate-source voltage that enables current to flow between the drain and the source. When the gate-source voltage is greater than zero, the N-Channel is “on”, allowing it to switch current between the gate and the source. When the gate-source voltage is less than zero, the N-Channel is “off”, preventing current from flowing. The drain-source voltage is also important for the device to function properly.

Advantages of TN2540N3-G

The TN2540N3-G is an efficient and reliable enhancement-mode MOSFET device. It offers several advantages over traditional transistors, such as improved temperature stability, low on-state resistance, and fast switching speed. Additionally, the device is highly reliable and offers a low power dissipation of 223 W at 25°C ambient temperature, which makes it suitable for high power applications.

The device also provides a low threshold voltage, which makes it suitable for interface electronic components and circuits. Additionally, it has a low maximum operating temperature of 175°C, meaning it can handle higher temperatures for extended time periods. This makes it suitable for harsh environmental conditions.

Conclusion

The TN2540N3-G is a single N-Channel enhancement mode MOSFET field effect transistor. It is useful for a variety of applications, such as DC-DC converters, motor speed control, and computers. The device has a maximum drain-source voltage of 200 volts, a maximum drain current of 40 amps, and a maximum power dissipation of 223 W at 25°C ambient temperature. It also has a low threshold voltage and a maximum operating temperature of 175°C, making it suitable for a range of applications.

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