TN6705A_D26Z Allicdata Electronics
Allicdata Part #:

TN6705A_D26Z-ND

Manufacturer Part#:

TN6705A_D26Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 45V 1.5A TO-226
More Detail: Bipolar (BJT) Transistor NPN 45V 1.5A 1W Through ...
DataSheet: TN6705A_D26Z datasheetTN6705A_D26Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-226
Description

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TN6705A_D26Z application field and working principle

TN6705A_D26Z is a type of transistor, or more specifically, a type of bipolar junction transistor (BJT). It is a common 3-pin single device, consisting of an emitter, base, and collector. The TN6705A_D26Z is used in electronics for a wide array of applications, from RF/microwave routers to high-frequency amplifiers.

Applications

The TN6705A_D26Z transistor is ideal for use in a variety of applications, including:

  • Transistor radios
  • RF amplifiers
  • Voltage regulator circuits
  • High-frequency switching circuits
  • High-frequency amplification

Working Principle

The TN6705A_D26Z transistor operates based on the flow of electrons, or current, between its emitter, base, and collector. When it is in its off state, the emitter-base junction is reverse biased and prevents current from flowing between the emitter and the base. However, when the base is forward biased, current flows freely between the emitter and base, creating a flow of electrons from the emitter to the base. This surplus of electrons then reaches the collector, allowing the current to flow from the collector to the base.

The amount of current that flows from the collector to the base is proportional to the amount of current flowing from the emitter to the base. This relationship is known as the "transistor gain," or "hFE", and is dependent on the type of transistor. For the TN6705A_D26Z transistor, the hFE can range anywhere from 25-45, depending on the exact model. This gain dictates the degree of amplification that a transistor provides and is an important factor to consider when selecting a particular model.

The TN6705A_D26Z transistor is a useful component for a variety of applications, due to its high frequency response, low noise, and high voltage intrinsic capability. It is capable of handling voltages up to 80V, and has a frequency response of up to 2.5GHz, making it ideal for high-frequency switching, amplifier, and radio applications. The TN6705A_D26Z is an important component which can be used to expand the capabilities of various electronics.

Conclusion

The TN6705A_D26Z is a type of single bipolar junction transistor (BJT), which is often used in electronics for applications ranging from RF/microwave routers to high-frequency amplifiers. It operates based on the flow of electrons between its emitter, base, and collector, and provides a transistor gain of 25-45, depending on the exact model. Finally, its high frequency response, low noise, and high voltage capability make it an important component for expanding the capabilities of various electronics.

The specific data is subject to PDF, and the above content is for reference

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