TN6715A_D74Z Allicdata Electronics
Allicdata Part #:

TN6715A_D74Z-ND

Manufacturer Part#:

TN6715A_D74Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 1.5A TO-226
More Detail: Bipolar (BJT) Transistor NPN 40V 1.5A 1W Through ...
DataSheet: TN6715A_D74Z datasheetTN6715A_D74Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-226
Description

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TN6715A_D74Z transistors are mostly categorized into single bipolar junction transistors (BJTs). A single bipolar junction transistor (BJT) is a three-layer semiconductor device which has three kinds of electronic carriers; electrons, holes, and the electrons of the majority carrier. A single BJT, namely TN6715A_D74Z, typically consists of a base, a collector and an emitter. The base can be shown as the gate in integrated circuits. Among them, an emitter is used as the terminal of the device, delivering the carriers as electrons into the other two regions.

This TN6715A_D74Z application field is quite extensive and can be found in multiple areas, including electronics, telecommunication, radio-frequency applications, computer industry and etc. First, in the electronics industry, the single BJT is mainly used as amplifying devices, like controlling a large current by using a small current. In this way, the linear amplification process is ensured, providing a stable and reliable output and working environment. Beside, TN6715A_D74Z is also widely utilized in telecommunication systems mainly for voltage regulated power supply. In addition, due to its advantage of primary breakdown protection and high power rating, it can also be found in voltage regulator, storage memory and motor speed controls. Last but not least, in the radio-frequency applications, single BJT plays an important role in the mixers, filters, multiplexers and modulators, due to its small size, low cost and high efficiency.

As for the TN6715A_D74Z working principle, there are two main ways to use this single bipolar junction transistor. In forward-active mode, the voltage at the base is higher than the emitter voltage and a forward current flows from base to emitter. In this condition, the base-emitter junction is forward-biased while the collector-emitter junction is reverse biased. On the contrary, in the saturation mode, both the base- collector and the collector-emitter junctions will be forward-biased and the collector current is nearly the same as the emitter current. In this way, volts drop between collector and emitter become minimum and the TN6715A_D74Z transistor is said to be in saturation mode.

To conclude, TN6715A_D74Z single bipolar junction transistors are largely applied in many industries, from electronics to telecommunication and radio-frequency application. Its working principle is mainly in forward-active or saturation mode which can provide excellent linear amplification and primary breakdown protection.

The specific data is subject to PDF, and the above content is for reference

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