Allicdata Part #: | TN6715A_D75Z-ND |
Manufacturer Part#: |
TN6715A_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 1.5A TO-226 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 1.5A 1W Through ... |
DataSheet: | TN6715A_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 1A, 1V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body (Formed Leads) |
Supplier Device Package: | TO-226 |
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The TN6715A_D75Z is a type of single bipolar junction transistor (BJT) designed for high-frequency, high-current, and low-voltage applications. This device is suitable for amplifier, oscillator and switching circuits. It is designed to be used in low supply voltage circuits such as those in computer and communications systems. The TN6715A_D75Z features a low Vce(saturation) of 0.55V, a high current gain of hFE=450 and a high frequency transition of fT=22GHz.The TN6715A_D75Z is a semiconductor device made of NPN silicon-germanium compound that acts as a three-terminal switch. It has three terminals, namely the emitter, base, and collector. The emitter is a negative terminal while the collector is the positive terminal. The base is the control terminal and this can control the flow of current between the collector and emitter terminals. When the base is forward biased, it allows the flow of current (or electrons) between the emitter and collector and, in this way, the transistor can act as an amplifier to increase the power of a signal.The working principle of the transistor can be explained using the principle of majority carrier. The majority carrier is the type of carrier with the higher relative concentration, which in this case, is the electrons. When the transistor is forward biased, the electrons from the emitter are drawn to the base and, as the collector is more positively charged, this attracts the electrons from the base to the collector. This in turn creates current flow from the emitter to the collector, providing amplification of the input signal.The TN6715A_D75Z is ideal for high-frequency, low-voltage applications due to its high-frequency transition of fT=22GHz and its low Vce(saturation) of 0.55V. The device is also suitable for amplifier and oscillator circuits due to its high current gain of hFE=450. Furthermore, its high gain allows it to be used in circuits with weak signals, as it is capable of amplifying these signals to produce strong output signals.Additionally, the TN6715A_D75Z can be used in switching applications. Its low switching delay allows for fast switching operations that are ideal for applications such as solid-state relays and circuit breakers. Moreover, the device’s low collector-emitter saturation voltage allows for a low shift in the voltage between the collector and emitter while the transistor is in the on state. The TN6715A_D75Z therefore provides reliable switching operations without causing any significant distortion in the signal.In conclusion, the TN6715A_D75Z is a type of single bipolar junction transistor (BJT) that is suitable for high-frequency, high-current, and low-voltage applications. It is capable of providing amplification of weak signals and is also suitable for switching circuits due to its fast switching operations and low Vce(saturation) voltage.
The specific data is subject to PDF, and the above content is for reference
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