Allicdata Part #: | TN6719A-ND |
Manufacturer Part#: |
TN6719A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.2A TO-226 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 200mA 1W Throug... |
DataSheet: | TN6719A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-226 |
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TN6719A is a single bipolar transistor (BJT), which is often used in modern power electronics applications. It is specially designed for advanced high power applications, with features such as low collector-emitter saturation voltage, high-current gain and high collector-base breakdown voltage. As its peak collector current is up to 37A, it is ideal for applications requiring high-power switching, such as power amplifier design, solar cell circuit and switching regulator design.
TN6719A has three-terminal pins, which are labeled as "Base", "Collector" and "Emitter". The pinout of TN6719A is shown in Figure 1. It can be seen that the Collector pin is connected to a P-type semiconductor for charge carrier transport, while the Emitter pin is connected to an N-type semiconductor for charge carrier transport.
The basic operation of the unit can be understood in terms of the Ebers-Moll model. The operation of TN6719A can be seen as a four-stage process consisting of:
- Contructive Stimulation: A voltage is applied to the Base pin, which creates a conduction channel between the Collector and the Emitter.
- Current Flow: The current flow (IC) between the Collector and the Emitter is proportional to the amount of current applied to the Base pin.
- Switch-on: When the current flowing through the transistor exceeds the rated current, a switching action takes place, which causes the base current to decrease.
- Switching-off: When the current decreases below the rated current, the transistor switch is turned off.
The two major applications of TN6719A are in switching power supply design and in power electronics design. For switching power supply applications, it can be used as a switching element to control the amount of current flowing through the circuit, thereby regulating the power supply. For power electronics applications, it can be used to control switching of the main current within the circuit and also to provide protection in case of overvoltage or overcurrent conditions. In both cases, it provides a relatively low cost and reliable method of switching power supply design.
In addition to its applications in power electronics and power supply design, TN6719A can also be used in various other applications, such as RF amplifiers, DC motor control, and signal conditioning circuits. It provides reliable performance over a wide frequency range and can be easily tested using an oscilloscope.
In conclusion, TN6719A is a single bipolar transistor (BJT), which is used in various power electronics applications due to its features such as low saturation voltage, high-current gain, and high collector-base breakdown voltage. It is used in both switching power supply design and power electronics design. It can also be used in other applications, such as in RF amplifiers, DC motor control and signal conditioning circuits. With its reliable performance and low cost, TN6719A is an ideal choice for various power electronics projects.
The specific data is subject to PDF, and the above content is for reference
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