TN6726A_D26Z Discrete Semiconductor Products |
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Allicdata Part #: | TN6726A_D26ZTR-ND |
Manufacturer Part#: |
TN6726A_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 1.5A TO226 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 1.5A 1W Through ... |
DataSheet: | TN6726A_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 1A, 1V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body (Formed Leads) |
Supplier Device Package: | TO-226 |
Base Part Number: | TN6726A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TN6726A_D26Z transistors, also known as Single Bipolar Junction Transistors (BJT), are a type of semi-conductor that consists of two p-n junctions in series with each junction integrated into the base-collector and collector-emitter structure. It is made from a wafer of semiconductor material, usually Silicon or Germanium, and is used for a wide range of applications in electronics. Its main function is to control the amounts of current that flows from the collector to the emitter.The substrate of TN6726A_D26Z transistors is made from a wafer of semi-conductor material, generally Silicon or Germanium. It is then heated up to around 1500°C and then cooled down to form a ‘base-collector’ layer. A ‘collector-emitter’ layer is then added and then heated up again to form the two junctions. The current is then able to flow through the device by use of the collector-emitter junction.Unlike other types of transistors, the TN6726A_D26Z transistor is able to switch between different statuses depending on the current gauge. It is able to operate in either ON or OFF statuses, with ON state allowing the current to flow from collector to the emitter and the OFF status restricting the flow. This ability makes the TN6726A_D26Z ideal for logic and switching applications, as well as for amplifying and amplifying signals.The TN6726A_D26Z transistors are often found in consumer electronics, communications circuits and computer peripherals. Their small size makes them ideal for these applications as it requires less space and power consumption. Additionally, their ON-OFF switching capability provides great flexibility to system designs that require the ability to dynamically switch between standby and power-on modes.The working principle of TN6726A_D26Z transistors is based on the ability of the base-collector junction to adjust the current flow between the collector and the emitter. When the base-collector junction receives small forward biasing current, it allows more current to pass through it and hence increases the overall current flow. The collector current is then determined by the amount of forward base current and the current normally flows from collector to the emitter.In conclusion, TN6726A_D26Z transistors are high performance, low cost transistors that can be used for a wide range of applications in consumer electronics and computer peripherals. These transistors provide a great degree of flexibility by allowing the user to switch between different statuses, depending on the current gauge. Moreover, they are able to amplify signals and provide an efficient and cost effective solution for logic and switching applications.
The specific data is subject to PDF, and the above content is for reference
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