Allicdata Part #: | TN6729A_D75Z-ND |
Manufacturer Part#: |
TN6729A_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 1A TO-226 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 1W Through Ho... |
DataSheet: | TN6729A_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 250mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 250mA, 1V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body (Formed Leads) |
Supplier Device Package: | TO-226 |
Base Part Number: | TN6729A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TN6729A_D75Z is a single NPN bipolar transistor device designed for use in automotive and industrial applications. This type of transistor is used in many electronic devices such as amplifiers, converters, switches, etc. In order to understand how this transistor device works, it is important to first explore its application field and working principle.
The TN6729A_D75Z is mainly used for switching and amplification applications. It can be used for driving a load or providing high frequency signals. In automotive applications, it can be used to drive solenoid actuators and fuel injection systems. In industrial equipment such as motor controllers, it can be used to switch voltage and current. Additionally, it can also be used to interface certain electronic devices such as audio amplifiers and digital signal processors.
The working principle of the TN6729A_D75Z is based on the basic operation of a bipolar junction transistor (BJT). A BJT consists of two PN junction diodes arranged in a sandwich structure. When a voltage is applied to the base-emitter junction, minority carriers (electrons) inject into the base region, which in turn causes a current to flow through the device. This current is then amplified by the collector-emitter junction.
The TN6729A_D75Z also operates on an IGBT-like principle. The conventional IGBT has an MTJ structure, where the base current is switched to various gate levels by controlling the voltage applied to the gate terminal. For the TN6729A_D75Z however, the gate terminal is not used, and instead the base current is switched by controlling the voltage applied to the base terminal. The IGBT-like operation allows the TN6729A_D75Z to achieve faster switching speeds compared to conventional bipolar transistors.
In summary, the TN6729A_D75Z is a single NPN bipolar transistor device designed for use in automotive and industrial applications. It is mainly used in switching and amplification applications. The working principle of the device is based on the basic operation of a bipolar junction transistor and it also has an IGBT-like operation. The TN6729A_D75Z can thus be used to switch high frequency signals and drive loads in various electronic devices.
The specific data is subject to PDF, and the above content is for reference
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TN6719A | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 300V 0.2A TO-22... |
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TN6716A | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 60V 2A TO-226Bi... |
TN6715A | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 40V 1.5A TO-226... |
TN6726A | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 30V 1.5A TO-226... |
TN6729A | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 80V 1A TO-226Bi... |
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