TN6714A_D27Z Allicdata Electronics
Allicdata Part #:

TN6714A_D27Z-ND

Manufacturer Part#:

TN6714A_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 2A TO-226
More Detail: Bipolar (BJT) Transistor NPN 30V 2A 1W Through Ho...
DataSheet: TN6714A_D27Z datasheetTN6714A_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-226
Description

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TN6714A_D27Z is one of the widely used types of transistors, specifically belonging to the category of Bipolar (BJT) – Single. A bipolar transistor is composed of two PN junction semiconductor layers, which lead to the current amplification between the Collector and Emitter terminals, depending on the intensity of the current flow from Base to Emitter.

TN6714A_D27Z transistors are widely used in amplifying circuits and switching, as well as in communication systems. It is also extensively used in integrated circuits and complex circuitry, illustrating the versatility of this type of transistor.

The operating principle of the TN6714A_D27Z transistor is quite simple; the Base-Emitter junction must be forward-biased and the Base-Collector junction must be reverse-biased, using negative and positive voltage on each junction respectively. The current flowing through the transistor can be controlled by the Base terminal, allowing the Collector current to be varied.

In terms of applications and uses, the TN6714A_D27Z transistor is used in a wide range of applications, including in amplifying circuits, switching systems, and various other applications in communication systems and integrated circuit technology. Its versatility and flexibility make TN6714A_D27Z a popular choice for designers and engineers.

When it comes to electrical characteristics, the TN6714A_D27Z is designed for use with a maximum operating voltage of 70 volts and a collector-emitter voltage of 100 Volts. It is also characterized by an average transition frequency of 10 GHz, an emitter-base voltage of 4 Volts, and a maximum collector current of 800mA. From its electrical characteristics, the TN6714A_D27Z is clearly suitable for a wide range of applications, as it combines high speed performance with high current output.

The TN6714A_D27Z can also be used in high frequency switching applications. This is due to its low capacitance, which results in a high operating frequency and low power consumption. Moreover, the TN6714A_D27Z is particularly well-suited for high speed digital communication, as its high frequency performance offers fast switching time and low power consumption.

All in all, the TN6714A_D27Z transistor is a versatile and reliable component for a variety of applications. Its simple yet efficient design allows for use in a wide range of electrical and communication systems. From amplifying circuits to high speed digital communication, the TN6714A_D27Z transistor is an excellent choice for designers and engineers.

The specific data is subject to PDF, and the above content is for reference

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