Allicdata Part #: | TN6727AFS-ND |
Manufacturer Part#: |
TN6727A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 1.5A TO-226 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 1.5A 1W Through ... |
DataSheet: | TN6727A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 1A, 1V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-226 |
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TN6727A is a single bipolar junction transistor (BJT), which is a three-terminal device made up of two p-n junctions designed to serve a variety of functions in electronic circuits. It is used as an amplifier, switch, modulator, rectifier and for switching applications. Common BJT devices include NPN and PNP, the TN6727A being an NPN type.
The basic operation of a BJT is based on the transfer of charge carriers between p- and n- type semiconductor materials in which it is made from. In an NPN type BJT, the base-emitter junction is forward biased and the base collector junction is reverse biased. This allows for current to flow between the collector and the emitter, with the base being the controlling element.
The TN6727A is a high-voltage type BJT, designed for use in applications with a maximum voltage of 200V. This makes it an ideal device to use in high-voltage applications or as a high-voltage indirect switch. The device has a low saturation voltage, a high breakdown voltage and a high switching speed, making it suitable for high-speed switching applications.
In addition, the device has a maximum collector current of 65A, a maximum collector dissipation of 30W, and a maximum power dissipation of 200W, making it suitable for applications that require switching high-current loads. The device also has a maximum junction temperature of 175°C and a maximum operating temperature range of -40 to 125°C.
In terms of the working principle, the TN6727A is an N-channel semiconductor device, which means that when a positive voltage is applied to the base, current flows from the collector to the emitter. This allows for device operation in either a Common Emitter (CE) or Common base (CB) configuration. In a CE configuration, the TN6727A acts as an amplifier, as the base current controls the output current. In a CB configuration, the TN6727A acts as a switch, as the base current controls the output voltage.
In summary, the TN6727A is a versatile, high-voltage BJT suitable for a variety of applications, including high-voltage switching, amplifying and rectification. Its high maximum voltage rating, low saturation voltage, high switching speed and high maximum collector current make it ideal for a wide range of applications. Additionally, it has a wide operating temperature range, making it suitable for both commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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