Allicdata Part #: | TN6725A-ND |
Manufacturer Part#: |
TN6725A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 50V 1.2A TO-226 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 50V 1.2A... |
DataSheet: | TN6725A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 1.2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 2mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 4000 @ 1A, 5V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-226 |
Base Part Number: | TN6725A |
Description
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TN6725A is an NPN bipolar junction transistor developed by Toshiba Corporation. It\'s characteristics are low collector to base capacitance and low collector to emitter saturation voltage. The TN6725A is mainly used for high-speed switching circuits and general purpose signal amplification applications.The main principle of a bipolar junction transistor (BJT) is based on the concept of current flow. A BJT consists of three layers of semiconductor material (emitter, base and collector) which are connected in series, forming a circuit. A voltage or current applied to the base controls the current through the transistor. The TN6725A has a collector-emitter breakdown voltage of 45V, a collector current of 2A and a collector-emitter saturation voltage of 0.1V. The device is designed to operate as a switching device and can be used in various circuits to control the flow of current. It is also suitable for various types of signal amplification applications.The TN6725A is a NPN type transistor, meaning that the emitter to base junction is forward biased and the collector to base junction is reverse biased. This type of transistor operates by allowing current to flow from the emitter to the base when a small forward bias is applied to the base-emitter junction. When the base-emitter junction is forward biased, current through the emitter-base junction starts to flow, with due contributions from the hole and electron carriers in p- and n-layers respectively. This causes a charge buildup in the base region, making it a region of high potential. The high potential in the base region then causes further electrons to flow from the emitter to collector by creating an electron-collector junction.Working principle of TN6725A is quite simple and straightforward. The low collector to base capacitance and low collector to emitter saturation voltage make it suitable for high-speed switching circuits or general purpose signal amplification applications. The lower capacitance in the device reduces the propagation delay and frequency response time. The lower saturation voltage improves the operating efficiency of the device.In conclusion, the TN6725A is a NPN bipolar junction transistor with low collector to emitter saturation voltage and low collector to base capacitance, which makes it suitable for high-speed switching circuits and general purpose signal amplification applications. The device is designed to work on current flow through the three semiconductor layers (emitter, base and collector), which are connected in series. This mechanism allows the device to control the flow of current through the circuit, allowing it to be used as a switching device or signal amplifier.
The specific data is subject to PDF, and the above content is for reference
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