TSM900N06CH X0G

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	TO-251 (IPAK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	90 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TSM900N06CH X0G is a high-performance, high-speed N-channel, Field-Effect Transistor (FET) available in a TO-220 full-pack package. It is commonly used in switching applications where high-speed performance is critical. This FET is capable of delivering up to 900V and 800A of continuous drain current.The TSM900N06CH X0G is a power MOSFET that features an advanced low RDS(on) structure with high-side short-channel protection, small-signal performance, reduced gate-drive power requirements, thermal stability, and low gate-to-drain capacitance (CGD). It has a low gate-charge (QG) and a high-current rating for hard switching applications.The TSM900N06CH X0G is an N-channel MOSFET that offers a high degree of protection from electrostatic discharge. It is designed with an integrated drift protection diode as well as an integrated Zener diode that helps to protect the device from transient voltage spikes. This MOSFET has a reverse surge threshold voltage of 900V, which provides a greater level of protection than traditional MOSFETs.The TSM900N06CH X0G is a fast-switching MOSFET that is ideal for switching applications in high-current, high-frequency switching. It can switch up to 800 amperes peak and it has an operating temperature range of -40°C to +150°C. The low gate-drain capacitance and on-state resistance ensures low switching losses and improved efficiency.The TSM900N06CH X0G is designed to operate as a switch in applications such as motor control, power supplies, and audio amplifiers. It is also suited for use in DC-DC converters, particularly when low on-state resistance, low gate charge, and high-current capability are desired.The working principle of a MOSFET is that when a voltage is applied to the gate, a current is generated in the channel of the device. This current creates an electric field across the channel, which in turn controls the flow of current through the channel. As the voltage applied to the gate changes, the electric field in the channel is altered and the flow of current is likewise adjusted.The TSM900N06CH X0G is a versatile device that can be used in a wide variety of applications. It is an ideal choice for applications that require a high-performance, high-speed switching device. Its low reverse surge threshold voltage, high-current rating, and low on-state resistance make it especially suitable for power switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description