TSM900N06CW RPG Allicdata Electronics

TSM900N06CW RPG Discrete Semiconductor Products

Allicdata Part #:

TSM900N06CWRPGTR-ND

Manufacturer Part#:

TSM900N06CW RPG

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 60V 11A SOT223
More Detail: N-Channel 60V 11A (Tc) 25W (Tc) Surface Mount SOT-...
DataSheet: TSM900N06CW RPG datasheetTSM900N06CW RPG Datasheet/PDF
Quantity: 1000
1 +: $ 0.12000
10 +: $ 0.11640
100 +: $ 0.11400
1000 +: $ 0.11160
10000 +: $ 0.10800
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Transistors are semiconductor devices that are commonly used in electronic circuits. They primarily act as switches, allowing or preventing the flow of electric current, depending on the voltage applied to the transistor. FETs, or Field-Effect Transistors, are a type of transistor that uses an electric field to control an output current. MOSFETs, or Metal-Oxide Semiconductor Field-Effect Transistors, are a type of FET that use a gate element to allow or prevent the flow of current, depending on the voltage applied to the gate. The TSM900N06CW is a popular single-channel MOSFET.

The TSM900N06CW MOSFET is designed to be used as an analogue switch in a variety of applications. It is a low-power device, so it is ideal for applications that require low power consumption and low voltage operation. It is also capable of switching frequencies of up to 10MHz, which makes it suitable for many digital signal processing applications. Common applications for the TSM900N06CW include radio frequency (RF) systems, data acquisition systems, controllers and test equipment.

The TSM900N06CW MOSFET operates by using a gate to allow or prevent the flow of current between the drain and source terminals. When a voltage is applied to the gate, the channel is opened and current can flow through the MOSFET. When the voltage is removed, the channel is closed, and the current is prevented from flowing. The gate voltage is typically between 0 and 12V, so the TSM900N06CW MOSFET is suitable for both higher and lower-voltage systems. The device is also capable of handling up to 9A of continuous current, and peak currents of up to 12A.

The TSM900N06CW MOSFET is also available in a thermally enhanced packaging, which means that it can dissipate more heat than traditional packaging, allowing for higher power dissipation and longer operational life. The device is also RoHS compliant, so it is suitable for use in green technologies and applications that require minimal environmental impact.

In conclusion, the TSM900N06CW is a versatile and popular single-channel MOSFET that is suitable for a wide range of electronic applications. It is designed to be used as an analogue switch, and it is capable of switching frequencies of up to 10MHz. The device is low-power, and it is available in thermally enhanced packaging for improved performance and longer life. Finally, it is RoHS compliant, making it suitable for environmentally friendly applications.

The specific data is subject to PDF, and the above content is for reference

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