XP0411100L Discrete Semiconductor Products |
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Allicdata Part #: | XP0411100LTR-ND |
Manufacturer Part#: |
XP0411100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS DUAL PNP SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | XP0411100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SMINI6-G1 |
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The XP0411100L is a pre-biased array of four PNP transistors, specifically designed for very high speed, high frequency applications. It is used in high performance signal processing circuits including RF, microwave and mixed signal applications. The XP0411100L works by providing a constant bias current to each of the four transistors in the array.
The transistors in the array are connected in parallel and the bias current can be adjusted by changing the gate voltage of the array. The transistors in the array have very fast switching times, which makes them ideal for use in high frequency applications. The transistors have a saturation voltage of 4V and a maximum junction temperature of +150°C.
The XP0411100L has an integrated MOSFET which provides a constant bias current to the transistors in the array. The MOSFET also provides a source of current for the drain. The current from the drain is then amplified and sent back to the gate of the MOSFET. This feedback signal is then used to adjust the bias current to the transistors in the array.
The XP0411100L also has an integrated control signal buffer which is used to control the current flow through the array. This signal buffer amplifies the control signal(s) and sends it to the gate of the MOSFET. The array then uses the amplified signal to adjust the bias current and enable the transistors in the array to switch on and off at the correct times.
The XP0411100L has been designed to be used in a variety of high performance signal processing applications. It is ideal for use in RF and microwave applications, as well as in mixed signal applications. The array is also very suitable for use in high speed signal processing circuits.
In summary, the XP0411100L is a four transistor array with an integrated MOSFET and a control signal buffer. It is ideal for use in high speed, high frequency signal processing applications, such as RF and microwave, as well as mixed signal applications. The XP0411100L is pre-biased, meaning that the bias current can be adjusted for optimum performance.
The specific data is subject to PDF, and the above content is for reference
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