XP0431600L Discrete Semiconductor Products |
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Allicdata Part #: | XP0431600LTR-ND |
Manufacturer Part#: |
XP0431600L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | XP0431600L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz, 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SMINI6-G1 |
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Transistors are electronic components used to control current in a circuit and they come in a variety of types. One such type is an XP0431600L Array transistor, which is a pre-biased, bipolar junction transistor (BJT). This type of transistor offers distinct advantages over other types, making it an ideal choice for applications where high power and high current capabilities are required. In this article, we will explore the application field and working principle of the XP0431600L Array transistor.
The XP0431600L Array transistor is designed for use in applications that require high power and high current. This type of transistor is perfect for high-speed switching circuits and power amplifiers, as it is able to handle large currents with extreme precision. Additionally, the pre-biased design of the XP0431600L Array transistor enables it to reduce power consumption and minimize switching noise, making it an ideal choice for applications that demand reliable performance and low-noise operation.
The working principle behind the XP0431600L Array transistor is fairly simple. This type of transistor is composed of an array of BJTs and is designed to operate in the forward-biased region with a single gate voltage. When a voltage is applied to the gate, it drives current through the array, allowing the transistor to rapidly and accurately switch from 0V to the supply voltage.
The single gate voltage is also responsible for controlling the current flow and this is done by changing the bias current, which is the portion of the current that controls the transistor’s operation. The bias current can be adjusted by changing the gate voltage, allowing the transistor to be used in applications that require different levels of current. Additionally, the single gate voltage also makes the XP0431600L Array transistor particularly robust and reliable, as it is less prone to failure due to voltage fluctuations.
In summary, the XP0431600L Array transistor is an ideal choice for applications that require high power and high current capabilities. Its pre-biased design reduces power consumption and minimizes switching noise, while its single gate voltage enables it to rapidly and accurately switch between 0V and the supply voltage. The single gate voltage also allows the bias current to be adjusted to meet the requirements of the application and its robust design makes it particularly reliable. With such a wide range of advantages, the XP0431600L Array transistor is clearly one of the most versatile and reliable transistors on the market today.
The specific data is subject to PDF, and the above content is for reference
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