XP0411600L Discrete Semiconductor Products

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A XP0411600L is an array of two unit transistors, usually of the bipolar junction transistor family, which is pre-biased. Specifically, it is an array of two individual 1012N metal planar NPN transistors, featuring a high DC current gain and low collector-emitter saturation voltages. It is intended as a compact surface-mounted, complementary transistor array.

The XP0411600L is constructed using a multi-junction monolithic substrate and is packaged in a 6-pin, SOT-363 plastic surface mountable case. It is made with a Vcesat of −200 mV and a C−E saturation voltage VCE(Sat) max. of 800 mV, with a collector-emitter saturation voltage of 25 V and an emission of 0.1 A. The device is also highly temperature stable, with a maximum operating temperature of 175°C.

In terms of applications, the XP0411600L is designed for high gain complementary applications such as low side drivers and buffers. It can also be used as a high side driver with the appropriate external components. Furthermore, it is suitable for high current gain, low power, applications such as load switches, level shifters, line transmission decoders, stepper motor interface circuits, power management, thermistor circuits, and switch mode DC-DC converters.

The working principle of the XP0411600L is simple. When the bias voltage is applied to the base terminal of the PNP transistor, the base-emitter junction of the PNP transistor is forward biased and a current of electrons from the emitter terminal to the base terminal flows. This turns on the PNP transistor and allows current to flow from the collector to the emitter. Similarly, when the bias voltage is applied to the base of the NPN transistor, the base-emitter junction of the NPN transistor is forward biased and a current of electrons from the emitter to the base flows. This turns on the NPN transistor, allowing current to flow from the collector to the emitter.

The output and saturation voltage of the XP0411600L are influenced by the voltage and current of the electrodes of the array transistors. The forward and reverse leakage current of the device is determined by the Vce of the transistor, the amount of current flowing through it and the quality of the internal components. The voltage and current of the output and saturation voltage will be coupled by the capacitance of the transistor and the quality of the connecting wires.

In conclusion, the XP0411600L is an array of two unit transistors, usually of the bipolar junction transistor family, which is pre-biased for a range of applications. It has a high DC current gain and low collector-emitter saturation voltages, with a maximum operating temperature of 175°C. The working principle is fairly straightforward, and the output and saturation voltage is largely determined by the voltage and current of the electrodes of the array transistors, as well as its internal components.

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