XP0428600L Allicdata Electronics

XP0428600L Discrete Semiconductor Products

Allicdata Part #:

XP0428600LTR-ND

Manufacturer Part#:

XP0428600L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN/PNP SMINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: XP0428600L datasheetXP0428600L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms, 1 kOhms
Resistor - Emitter Base (R2): 47 kOhms, 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SMINI6-G1
Description

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The XP0428600L is a pre-biased, bipolar transistor array designed for applications where low noise and low cost are of the essence. It is a two-terminal device with four discrete NPN transistors, each of which has a collector, emitter, and base lead. The device is designed to operate with a single power supply of either positive or negative polarity.

Typically, the device is used as a low noise preamplifier. It is commonly used in audio, voice, and data applications where low noise and low cost are important factors. Its high gain and low noise characteristics make it ideal for applications requiring low noise and reliability. The device can also provide low distortion performance when operating in an environment that is free from significant EMI or RFI sources.

The XP0428600L is a pre-biased array, which means that the base potential is already pre-set at a predetermined point on the device’s output curve. This eliminates the need for an external bias circuit, and allows for a much simplified design. The array also includes an integral protective Zener diode, and thermal shutdown circuitry, which ensures the device functions properly in extreme temperature environments.

The XP0428600L works by amplifying the input signal to a predetermined level. This is done by using the four discrete NPN transistors to convert the low level input signal into a higher level, more usable output signal. This amplification is done via a process known as bipolar junction transistor (BJT) action. In this process, an input current is applied to the base lead of the transistor, which causes a much larger emitter current to flow. The emitter current then travels through the transistor’s collector lead and out of the device.

Once the output signal reaches its predetermined level, the current is then either redirected back through the transistor’s base lead or in the opposite direction, depending on the desired output voltage polarity. The output voltage is then fed back to the device’s input, where it is amplified again as needed. This process is repeated until the output reaches its desired level.

The XP0428600L can achieve high gain accuracy, low input and output noise, and excellent thermal stability. Its wide supply voltage range of 6 to 32 volts, and low power consumption, make it particularly well suited for low cost applications. It is also designed to be highly robust and reliable, with the capability of handling input transient voltages up to ±40 volts.

The XP0428600L is a great solution for applications that demand low noise, low cost, and good performance. Its pre-biased design and integral protection features make it a reliable, efficient, and cost effective choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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