ZTX849STOA Allicdata Electronics
Allicdata Part #:

ZTX849STOA-ND

Manufacturer Part#:

ZTX849STOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 30V 5A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 30V 5A 100MHz 1.2W Th...
DataSheet: ZTX849STOA datasheetZTX849STOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 1.2W
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX849
Description

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ZTX849STOA Application Field and Working Principle

ZTX849STOA is a type of Bipolar Junction Transistor (BJT). It is a single diode junction transistor (SDJT) which has two emitter/base junctions and one collector/base junction in its structure. BJT is a current-controlled device and its operations are based on the emitter/base junction and collector/base junction. The BJT is commonly used as an amplifier or switch because of its high current gain, low noise, simple circuit design, and low power consumption.

In ZTX849STOA application field, this transistor is suitable for signal switching applications in television receivers, sound systems, and communication systems. As an amplifier, it is used for amplifying weak signals in a variety of circuits such as receiver, stereo systems, amplifiers, etc. It is also used for signal buffering and level shifting. The ZTX849STOA transistor can be used as a switch in the system for controlling the power supply and ground connections of integrated circuits.

ZTX849STOA transistor\'s working principle is based on the electrical changes or voltage variations that occur in the collector/base junction when the current flows through the emitter/base junction. In this transistor, the collector/base junction operates in the saturation or cut-off region. In the cut-off region, the voltage across the collector/base junction is large enough that the transistor acts as an open switch, blocking the current. In the saturation region the current is allowed to flow and the base junction acts as an amplifier, increasing the current by the current gain. The Operation of the ZTX849STOA transistor thus is based on these two regions.

The gain of the ZTX849STOA transistor depends on the type of application and configuration in which it is used. It usually ranges from 1000 to 2700. As the power gain of a BJT Transistor increases, the overall power efficiency increases as well. The ZTX849STOA transistor has a high power gain, due to which it can handle high power signals. Moreover, this transistor is low noise and hence can be used in audio applications.

The ZTX849STOA Transistor can be easily configured and integrated into various circuits. It is easy to install and provides reliable performance. Additionally, the ZTX849STOA transistor is a robust device, which has a high frequency for the Base Current I B (in kHZ). It is available in different package sizes and has a wide range of voltage ratings, from 5V to 60V.

In conclusion, ZTX849STOA is a single diode junction transistor, which is suitable for signal switching and amplifying applications in a variety of circuits like television receivers, sound systems, amplifiers, etc. It is low noise, has a wide range of voltage ratings, and is a relatively easy device to install and configure. Furthermore, due to its high current gain, it can handle high power signals and provide reliable performance, making it an ideal choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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