ZTX851STZ Discrete Semiconductor Products

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Introduction to ZTX851STZ

ZTX851STZ is a single NPN transistor designed for a variety of discrete and small-signal amplification applications. It is suitable for use in many circuits, including linear and switching circuits. The ZTX851STZ has a maximum collector-emitter voltage of 30V and a maximum collector-base voltage of 60V, as well as a maximum power dissipation of 150 mW. It is made using a silicon epitaxial planer process, and offers low noise and high gain. It also has an effective beta (current gain) range of 100 to 300. Additionally, the ZTX851STZ has a high transition frequency, making it suitable for radio frequency applications.

ZTX851STZ application field and working principle

The ZTX851STZ is suitable for a variety of applications, such as audio amplification and signal conditioning. It can be used in audio power amplifiers and loudspeakers, as well as voltage regulators and optocouplers. Additionally, the ZTX851STZ can be used in motors, switches, and thermostats. It is also suitable for analog and digital signal processing.

The ZTX851STZ functions as a three-terminal electronic component, with the collector, emitter, and base terminals. The base terminal allows current to flow in and out of the transistor, controlling the flow between the other two terminals. In other words, the current that flows from the collector to the emitter is regulated by the base current, amplifying it by a factor known as the current gain. This current gain has a typical value of 100-300 and is specified as the collector current divided by the base current.

The ZTX851STZ also has a voltage gain, which is the voltage between the collector and the emitter of the transistor divided by the voltage between the base and the emitter. This voltage gain is usually lower than the current gain and is typically between 10 and 20. This voltage gain is affected by the load resistance, with a higher load resistance resulting in a higher voltage gain.

Conclusion

The ZTX851STZ is a single NPN transistor designed for a variety of discrete and small-signal amplification applications. It has a maximum collector-emitter voltage of 30V, a maximum collector-base voltage of 60V, and a maximum power dissipation of 150 mW. The ZTX851STZ is suitable for audio amplification and signal conditioning, voltage regulators, motor control, signal switching, and other applications. It functions as a three-terminal device, with the current flowing from the collector to the emitter being regulated by the current flowing through the base. Additionally, the ZTX851STZ has both a current gain range of 100-300 and a typical voltage gain range of 10-20.

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