ZTX855 Allicdata Electronics

ZTX855 Discrete Semiconductor Products

Allicdata Part #:

ZTX855DI-ND

Manufacturer Part#:

ZTX855

Price: $ 0.78
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 150V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Th...
DataSheet: ZTX855 datasheetZTX855 Datasheet/PDF
Quantity: 3970
1 +: $ 0.71190
10 +: $ 0.63378
100 +: $ 0.49411
500 +: $ 0.40818
1000 +: $ 0.32225
Stock 3970Can Ship Immediately
$ 0.78
Specifications
Series: --
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: E-Line (TO-92 compatible)
Description

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The ZTX855 is a single bipolar junction transistor (BJT) that is used in a wide array of applications. It is a general-purpose transistor, and can be used in many common circuit designs. The ZTX855 has a low collector-emitter cutoff voltage, which makes it suitable for use in low voltage applications such as audio amplifier circuits. It is also used in some linear applications, as its high beta characteristic allows it to provide stable current gain over a wide range of operating conditions. Its low on-resistance also allows it to be used in analog switch applications, driving a low-level signal through a high current load.The ZTX855 is a PNP type transistor, meaning that it allows current to flow between the collector and emitter when the base terminal is connected to a positive voltage. The ZTX855 has a gain (hFE) of around 68 at 4.5V and 5mA, and an additional gain of around 35 at 4.5V and 25mA. The ZTX855 can be used in amplifier circuits up to 100kHz and signal switching applications up to 10kHz.The ZTX855 has an active region of approximately 2 volts, meaning that it can only be used in circuits that operate with a supply voltage of 2 volts or higher. Other electrical characteristics of the ZTX855 include a reverse base-emitter voltage of 5 volts, and a collector-emitter saturation voltage of 0.2 volts. When used in amplifier circuits, the ZTX855 can provide up to 15W of output power and a gain in excess of 100 around 10kHz.Due to its wide range of operating characteristics, the ZTX855 is an extremely versatile device, and can be used in a variety of applications. Its low collector-emitter cutoff voltage makes it suitable for low voltage applications, such as audio amplifiers, and its low on-resistance makes it suitable for analog switch applications. The ZTX855 is also suitable for signal switching applications up to 10 kHz, as its high beta characteristic provides stable current gain over a wide range of conditions.In conclusion, the ZTX855 is a versatile single bipolar junction transistor (BJT) that is suitable for a variety of applications. It has a low collector-emitter cutoff voltage, making it suitable for low voltage applications, and a high beta characteristic that allows for stable current gain over a wide range of conditions. The ZTX855 is also suitable for linear applications, as its low on-resistance makes it suitable for analog switch applications. Furthermore, the ZTX855 can provide up to 15W of output power and a gain in excess of 100 around 10kHz.

The specific data is subject to PDF, and the above content is for reference

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