ZTX857 Allicdata Electronics
Allicdata Part #:

ZTX857-ND

Manufacturer Part#:

ZTX857

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 300V 3A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 300V 3A 80MHz 1.2W Th...
DataSheet: ZTX857 datasheetZTX857 Datasheet/PDF
Quantity: 438
1 +: $ 0.81270
10 +: $ 0.72576
100 +: $ 0.56587
500 +: $ 0.46744
1000 +: $ 0.36902
Stock 438Can Ship Immediately
$ 0.9
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 600mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Power - Max: 1.2W
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX857
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZTX857 is a NPN silicon epitaxial planar transistor featuring high DC current gain, low noise and good linearity. It is designed for use in high-gain switching applications, preamplifier and driver stages with good linearity. The ZTX857 is the perfect choice for all your audio, video and power transistor needs.

The ZTX857 is an NPN bipolar junction transistor (BJT) constructed with a silicon epitaxial base and has a 1.5 amp collector current rating. It offers a maximum collector-emitter voltage of 30 volts and a collector-base voltage of up to 80 volts. The transistor has a maximum power dissipation of 60 watts, making it a perfect choice for high-power applications. The ZTX857 also features an Ft, or frequency transition of 30 MHz and an hFE of 100 at 1mA collector current.

The ZTX857 has a very high current gain in the range of 100 to 800, and good linearity in the audio and video frequency range. This makes it ideal for use in pre-amplifier and driver stages, where high gain and good linearity are essential. It also has good noise characteristics and a low noise figure in the audio and video frequency range.

The working principle of the ZTX857 is based on the NPN design. It works by allowing the collector current to flow from the collector to the emitter when the base voltage is greater than the emitter voltage. More electrons are left in the valence band of the base and fewer electrons are left in the conduction band of the base. This creates a voltage difference between the base and the emitter and the current flows. This is known as the collector-base current gain.

The ZTX857 is used in various applications ranging from low noise amplifiers, audio and video amplifiers, television video amplifiers, video switchers and modulators , test instrumentation, data communications and power amplifiers. It is also used in DC-to-DC applications such as switching supplies, solenoids and relays.

In summary, the ZTX857 is a high-performance NPN bipolar junction transistor designed for high-gain switching applications, pre-amplifier and driver stages with good linearity and low noise. It offers a high current gain, good linearity, low noise figure and a wide range of operating conditions. It is a perfect choice for audio, video and power transistor applications.

The specific data is subject to PDF, and the above content is for reference

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