ZTX855STZ Allicdata Electronics
Allicdata Part #:

ZTX855STZ-ND

Manufacturer Part#:

ZTX855STZ

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 150V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Th...
DataSheet: ZTX855STZ datasheetZTX855STZ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.30076
Stock 1000Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX855
Description

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The ZTX855STZ is a silicon NPN epitaxial static Bipolar junction transistor, which is engineered and utilized for a wide range of applications. The ZTX855STZ transistors are built using a planar structure with epitaxial layers that have a hFE in the range of 1000, as well as having a high breakdown voltage between 45 and 65 volts. These properties render them suitable for a range of power, audio and switching applications.

For each application, the proper dimensions, specifications and other critical parameters must be the same in order to produce the proper performance. The ZTX855STZ transistors feature PNP (bipolar junction) channels that are either single or dual transistors, depending upon the model. The transistors are able to operate at a DC current ranging from 1A to 5A, as well as a maximum AC/DC power dissipation of 8W. Depending upon the operating current, this transistor is able to provide up to 40 volts of collector to emitter breakdown voltage.

The ZTX855STZ transistors, as with all bipolar (BJT) transistors, operate based on the principle of base current controlling the current flow from collector to emitter. These transistors are dependent upon the electrical current in the base terminal, which is referred to as the cut-in current. The ZTX855STZ transistors have a maximum current voltage from collector to emitter (VCE) of 40 V. As the voltage between the collector and base increases, the amount of current that will flow from collector to emitter increases as well.

The ZTX855STZ transistors are designed to provide a number of different applications, such as audio amplifiers, high frequency switch and high power switching, as well as power control applications. The transistors are known for their ruggedness, high reliability, and low harmonic distortion when operating at high frequencies. Additionally, the use of planar construction helps reduce stray inductance and provide high gain, making them suited for use as high frequency switches in telecom systems.

The ZTX855STZ transistors are often used in industrial applications as well, where their robust design and shock resistance make them an ideal choice. For example, these transistors are often employed in elevator controls, motor control systems, and railway signaling systems. They are also used in automotive electronics, particularly for controlling ignition coils, injectors, and lamps.

The ZTX855STZ transistors provide an ideal solution for applications that require robustness, high levels of reliability, and low harmonic distortion at high operating frequencies. With their low cut-in current and robust construction, these transistors offer long-term reliability and performance that is ideal for use in a wide range of applications from industrial and automotive to telecom systems.

The specific data is subject to PDF, and the above content is for reference

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