ZTX853STOB Allicdata Electronics
Allicdata Part #:

ZTX853STOB-ND

Manufacturer Part#:

ZTX853STOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 100V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 100V 4A 130MHz 1.2W T...
DataSheet: ZTX853STOB datasheetZTX853STOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 1.2W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX853
Description

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ZTX853STOB transistors, also known as bipolar junction transistors (BJT) is a single device that is commonly used in many applications in the electronics industry. It is a three terminal device with an NPN structure with an emitters, base and collector. The device is popular because of its good linearity and its high breakdown voltage and high current gain. The ZTX853STOB has an operating voltage of 10.0V and a maximum current rating of 200mA. This device is manufactured by Zetex, a leading manufacturer of transistors and integrated circuits.

The ZTX853STOB can be used for a variety of applications. It is commonly used as a switching device in circuits where low current is needed and high voltage control is required. It is also used in digital circuits as a logic switch performing the role of "AND" logic functions in logic circuits. Other popular applications include audio amplifiers, pulse generators, radio frequency amplifiers and drivers, and other signal conditioning applications. The ZTX853STOB is an ideal choice for many circuit applications due to its low power dissipation and high gain.

The working principle of the ZTX853STOB is based on the physical phenomenon known as a "bipolar transistor" or "field-effect transistor". Two regions of N-type conductivity material, called N-regions, are separated by a thin layer of P-type material called the P-region. In the simplest form of the transistor, current flow from the base to the emitter is blocked until a voltage​ is applied to the base material. This process is called forward biasing and results in a current flow from the emitter to the collector. Conversely, reversing the direction of the applied voltage to the base material will block the current from flowing from the collector to the emitter.

The bipolar operation of the ZTX853STOB is responsible for its ability to amplify electrical signals. It amplifies currents by non-linear chemical reactions involving the N-regions. These current paths increase the gain of the signal by "opening" and "closing" the current paths. The linearity of the device is determined by the quality of the contact between the substrate, base and collector materials. If the contact is not good, there will be distortion.

Generally, the ZTX853STOB is very reliable and can withstand high voltages. Its range of current and voltage ratings makes it ideal for many circuit designs. Its small size and light weight reduce system design costs. The ZTX853STOB is able to handle both static and dynamic current applications. Its low voltage drop also makes it suitable for low power systems. The device is also temperature stable and can withstand a wide temperature range.

In conclusion, the ZTX853STOB is an ideal choice for many applications in the electronics industry. Its inherent characteristics make it suitable for a variety of applications including audio amplifiers, logic switches, pulse generators and radio frequency amplifiers. Its high current gain, low voltage drop and good linearity help ensure reliable performance. Its ease of use, low costs and temperature stability make it a preferred choice in many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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