ZTX855STOB Allicdata Electronics
Allicdata Part #:

ZTX855STOB-ND

Manufacturer Part#:

ZTX855STOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 150V 4A E-LINE
More Detail: Bipolar (BJT) Transistor NPN 150V 4A 90MHz 1.2W Th...
DataSheet: ZTX855STOB datasheetZTX855STOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Power - Max: 1.2W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX855
Description

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The ZTX855STOB transistor is a commonly available single-transistor component manufactured for a variety of industrial and consumer electronics applications. It is a type of bipolar junction transistor (BJT), where current flows through a semiconductor device containing a control element – the base. The ZTX855STOB is designed for use in a variety of symmetrical circuits, such as those used for audio power output stages or as DC-DC converters.

The ZTX855STOB is particularly beneficial due to its low power dissipation and low thermal resistance. Its significantly low voltage and current gain is also advantageous; as a result, it has a higher power output and lower noise than most other transistors of similar size. This makes it particularly useful in high-frequency circuits such as in radio-frequency or microwave applications.

The working principle of the ZTX855STOB is based upon controlling the current flow between the emitter and collector terminals by regulating the current flow entering its base. By applying a forward bias voltage to the base-emitter junction, the current between the emitter and collector connections is controlled and amplified. As the ZTX855STOB has a low voltage and current gain, the current flow into the base is relatively low. Therefore, it can be used in circuits where a moderate current gain is required.

The ZTX855STOB is primarily used in audio power output stages. It is particularly beneficial for use in circuits requiring a low noise and low power dissipation. Its high frequency response makes it well-suited for use in radio-frequency or microwave applications. In addition, it can be used in voltage regulation circuits, and DC-DC converters. One unique application of the ZTX855STOB is in the design of so-called self-biased circuits, where the ZTX855STOB is used to provide bias voltage to other BJT transistors.

In conclusion, the ZTX855STOB is a type of single-transistor component manufactured for use in industrial and consumer electronics applications. It has a low power dissipation and low thermal resistance and is well-suited for use in audio power output stages, radio-frequency or microwave applications, voltage regulation circuits, and DC-DC converters. Furthermore, it can be used in self-biased circuits to provide bias voltage to other BJT transistors.

The specific data is subject to PDF, and the above content is for reference

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