Allicdata Part #: | ZTX869STZ-ND |
Manufacturer Part#: |
ZTX869STZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 25V 5A E-LINE |
More Detail: | Bipolar (BJT) Transistor NPN 25V 5A 100MHz 1.2W Th... |
DataSheet: | ZTX869STZ Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 220mV @ 100mA, 5A |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 300 @ 1A, 1V |
Power - Max: | 1.2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | E-Line-3 |
Supplier Device Package: | E-Line (TO-92 compatible) |
Base Part Number: | ZTX869 |
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ZTX869STZ is a member of the family of single bipolar junction transistors (BJT). It is most often used in this type of application because it is suitable for use with moderate voltages, has good speed characteristics and requires only a simple arrangement of components.
A bipolar junction transistor has three distinct areas of current concentration. The first is the base which is very lightly doped compared to either the emitter or collector regions. The other two regions are the emitter and collector which are heavily doped. The emitter and collector are always connected and form a single continuous layer of semiconductor material. In a basic BJT, they are supplied with a forward bias, which causes the majority carriers to move through the base and enter the emitter and collector regions.
When a voltage potential is applied across the emitter and collector of a single BJT, the transistor will be ‘on’ and current will flow through the device. This process is known as static conduction. The static operating point of a BJT is determined by the current and voltage produced by the external bias. As the base current changes, so does the collector current, leading to the device’s dynamic operating point.
An increase in the base current will lead to an increase in the collector current and this is known as the ‘alpha’ of the BJT. The ‘alpha’ describes the proportion of the base current, which is converted into collector current. This directly affects the gain of the BJT, making it useful for amplifying weak signals, such as audio signals.
The ZTX869STZ is a commonly used single BJT. It is often used in radio transmitters and receivers and in low power circuits. The device has a fast switching time and a low voltage drop. It is also capable of handling high current, making it suitable for a variety of tasks. It is a reliable device and is relatively inexpensive compared to other transistors.
The ZTX869STZ is a single BJT and it has a base, an emitter and a collector. The base is connected to a biasing voltage and the base voltage determines the conduction state of the transistor. The current entering the base is amplified by the transistor and then exits the collector. The output current is limited by the current gain of the transistor, which is determined by the base current.
In conclusion, the ZTX869STZ is a single bipolar junction transistor and is most often used because of its fast switching speed and low voltage drop. The device can handle high current and is relatively inexpensive. It is also useful for amplification, controlling signals and power supply regulation.
The specific data is subject to PDF, and the above content is for reference
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