Allicdata Part #: | ZVN0124ASTOB-ND |
Manufacturer Part#: |
ZVN0124ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 240V 0.16A TO92-3 |
More Detail: | N-Channel 240V 160mA (Ta) 700mW (Ta) Through Hole ... |
DataSheet: | ZVN0124ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 240V |
Current - Continuous Drain (Id) @ 25°C: | 160mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16 Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 85pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVN0124A is a single N-channel enhancement mode MOSFET designed to provide low on-resistance, high voltage and fast switching in a very small form factor. The small size allows for use in a wide range of applications, including high current density circuits, low distortion audio amplifiers, and power conversion circuits. With its high level of ESD protection, high voltage tolerance, and low capacitance, the ZVN0124A is an ideal choice for use in high frequency, high-power circuits.
The ZVN0124A is designed for high frequency switching applications in which low on-resistance and reduced power dissipation are the most important design criteria. The ZVN0124A features an advanced design that provides a low gate-source voltage (VGS) and high on-resistance (RDS) together with rapid switching speed and low capacitance. The on-resistance of the device is typically 0.2 ohms, while the maximum allowed gate-source voltage (VGS) is 20V.
The ZVN0124A is capable of switching up to 20V, with a low gate-source threshold voltage (VGS(th)) of 0.8V. This allows for design of high voltage driving circuits with low power dissipation, resulting in lower system levels of power dissipation. The low gate to source capacitance (Cgd) of the device, coupled with its low gate drive impedance, allows for high frequency operation at high speeds, resulting in fast switching times.
The ZVN0124A works by utilizing the MOSFET\'s symmetrical structure, whereby a positive voltage applied to the gate can be used to create a controlling field which increases the current flow in the N-channel. By increasing the voltage applied to the gate, the field increases, allowing for higher current transfer. The current flow across the device is limited by the body diode, which acts as a fail-safe in case of unexpected voltage rises or falls.
The ZVN0124A is a highly flexible device, offering superior performance in high current applications and fast switching in power conversion circuits. It is capable of providing low on-resistance, fast switching, and high voltage tolerances in applications where fast and reliable device performance is desired. With its ability to handle high currents and its fast switching speeds, the ZVN0124A is an ideal choice for use in high power electronic circuits, power conversion applications and low distortion audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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