Allicdata Part #: | ZVN0545ASTZ-ND |
Manufacturer Part#: |
ZVN0545ASTZ |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 450V 0.09A TO92-3 |
More Detail: | N-Channel 450V 90mA (Ta) 700mW (Ta) Through Hole E... |
DataSheet: | ZVN0545ASTZ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.51545 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 90mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 50 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 70pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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ZVN0545ASTZ is a single N-channel enhancement mode MOSFET featuring an exceptionally low on-resistance. This component is supplied in the SOT-23 package, making it an ideal solution for a number of applications where space conservation is a priority. This component also has a low gate threshold voltage, which makes it suitable for wide range of gate drive options. With this component, design engineers can achieve extremely low-on-resistance and high-switching performance under a wide variety of conditions.
This part is suitable for a number of different applications, ranging from low voltage switching to high voltage switching applications. In the former case, it is commonly used, for example, in consumer electronics to switch DC power either on or off. It can also be used in motor control applications, and as a power switch in consumer power supplies. In terms of high voltage applications, it is commonly seen in lighting systems, industrial motor control, and power supplies.
The working principle for the ZVN0545ASTZ is quite simple and similar to any other single N-channel enhancement MOSFET. It works by utilizing the mass-action law, which states that the current passing between two points A and B is proportional to the voltage difference between them when temperature and geometry are held constant. This means that, when a voltage is applied between the gate and source terminals, a current will flow through the channel connecting the source and drain terminals. The magnitude of current passing through the channel is directly proportional to the voltage applied to the gate terminal.
This component also features low gate threshold voltage, which makes it easier for the designer to choose appropriate drivers for switching the MOSFET on and off. Therefore, it can be used in a number of applications without needing to worry about sourcing separate drivers. Additionally, due to its exceptionally low on-resistance, it makes possible achieving extremely low-on-resistance and high-switching performance under a wide variety of conditions.
Finally, the ZVN0545ASTZ is available in both SOT-23 and TO-220 packages. This gives the design engineer the choice of either footprint, depending on their particular design requirement. This is important, as the size and footprint of the component can have a huge impact on the overall design.
Overall, the ZVN0545ASTZ is an excellent choice for a wide range of applications that require low-on-resistance and high-switching performance. The low gate threshold voltage and the various package options make it an even more attractive option. With this component, design engineers can achieve extremely low-on-resistance and high-switching performance under a wide variety of conditions.
The specific data is subject to PDF, and the above content is for reference
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