ZVN0124ZSTZ

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	240V
Current - Continuous Drain (Id) @ 25°C:	160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	16 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	85pF @ 25V
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	E-Line (TO-92 compatible)
Package / Case:	E-Line-3

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ZVN0124ZSTZ Application Field and Working Principle

The ZVN0124ZSTZ is an N-channel Enhancement Mode, Depletion Enhancement MOSFET which was manufactured and developed by Diodes Incorporated. It is a component component used in a variety of electronic applications and circuits.

Description and Features

The ZVN0124ZSTZ is a component component which is characterized by its small size, making it ideal for mobile applications such as mobile phones, smartphones, and other portable electronic devices. Its extremely low on-resistance is ideal for low-voltage circuit design and provides exceptional thermal performance while ensuring a stable performance over a wide temperature range. This component component can be used in both high- and low-side switching circuits, allowing engineers to design sophisticated and reliable switching circuits.The ZVN0124ZSTZ is a component component that combines the two MOSFETs in a single package and thus saves valuable board space. This component component can be used in both high- and low-side switching circuits and features a low RDS(on) as well as a fast switching speed. Its fast recovery time allows it to switch quickly and efficiently, resulting in minimal switching losses and improved efficiency. It also features an advanced gate protection structure that increases reliability in tough environments and reduces the risk of damage due to electrostatic discharge.

Applications

The ZVN0124ZSTZ component component is widely utilized in a variety of electronic applications, including switched-mode power supplies, DC-DC converters, voltage regulators, and low-voltage switching circuits. It is also suitable for a variety of high-frequency and power electronics applications due to its low RDS(on) and fast switching speed. Additionally, it is used in automotive applications and lighting control systems.

Working Principle

The ZVN0124ZSTZ component component is a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The MOSFET is a transistor type in which the semiconductor is controlled by an electric field. This component component is an enhancement-mode type, which means that the MOSFET is normally off until a gate voltage is applied. Once the gate voltage is applied, the MOSFET will conduct current between the source and drain electrodes.The ZVN0124ZSTZ is a depletion-enhancement type which means that the MOSFET can be turned on without applying a voltage to the gate. To turn on this component component, current is applied to the drain. This type of MOSFET is known as a Depletion Mode MOSFET, as it depletes the channel of electrons, allowing more current to pass. This type of MOSFET is useful for applications where a quick response is required, such as switching circuits and motor control.

Conclusion

The ZVN0124ZSTZ is an N-channel Enhancement Mode, Depletion Enhancement MOSFET that is used in a variety of electronic applications, including switched-mode power supplies, DC-DC converters, voltage regulators, and low-voltage switching circuits. It is a component component characterized by its small size and low on-resistance, making it ideal for use in mobile devices and other high-frequency and power electronic applications. Additionally, this component component is an enhancement-mode type and a depletion-enhancement type, allowing it to be turned on without applying a voltage to the gate, making it a useful component for applications requiring a quick response.

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