ZVN0124ZSTOA

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	240V
Current - Continuous Drain (Id) @ 25°C:	160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	16 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	85pF @ 25V
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Through Hole
Supplier Device Package:	E-Line (TO-92 compatible)
Package / Case:	E-Line-3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZVN0124ZSTOA device is a high performance N-channel enhancement mode MOSFET which offers exceptional performance for general purpose applications. The ZVN0124ZSTOA is ideally suitable for DC-DC conversion, fast switching and polarity protection circuits.In operation, the ZVN0124ZSTOA is a three terminal device with the semiconductor channel connecting the drain and source terminals. The gate terminal is used for controlling the current in the channel. A positive gate voltage will turn the FET on and a negative gate voltage will turn it off.The ZVN0124ZSTOA FET has a wide range of applications. It is commonly used in DC/DC converters to provide switch mode operation in which power is efficiently transferred from a high voltage source to a low voltage load. The device can also be used as a switch, providing efficient control of power to a load in either direction.The ZVN0124ZSTOA operates in the enhancement mode, meaning that the current in the drain-source channel is switched on when a voltage is applied between the gate and source terminals. This is opposed to the depletion mode, in which a voltage between the gate and source terminals is required to switch off the current in the channel. This allows for either complemented logic or non-complemented logic to be employed.The device is suitable for use in moderate power applications due to its excellent on-state characteristics. The device is capable of switching up to 2 amps in a 2V gate voltage drop. The on-state resistance of the ZVN0124ZSTOA is low in both active and off-state ranges.The ZVN0124ZSTOA is also ideal for use in polarity protection circuits. The FET has a low threshold voltage (Vth) which enables it to operate with lower input voltage sources. This makes it suitable for use in battery powered applications, such as battery powered laptop computers.The FET is also highly suitable for use in fast switching applications, such as in power supplies. Its excellent switching characteristics allow it to switch efficiently between high and low power states, ensuring excellent power supply efficiency.The ZVN0124ZSTOA also has excellent noise immunity and EMC (electromagnetic compatibility) characteristics. The FET has a low level of noise generation and is highly EMC compliant. This ensures that the device meets all necessary standards for operation in controlled and congested electronic environments.In conclusion, the ZVN0124ZSTOA MOSFET is an excellent choice for general purpose applications. Its excellent on-state characteristics, low gate threshold voltage, low level of noise generation and excellent EMC compliance make it ideal for all kinds of power applications, fast switching and polarity protection. It is capable of efficiently switching up to two amps in a two-volt gate voltage drop and meets all necessary EMC standards.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description