ZVN0540ASTZ

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The ZVN0540A is a logic-level enhancement mode N-Channel Field-Effect Transistor (FET) produced by Diodes Inc. also known as DMN0540A. It is designed to be used in low voltage applications such as battery powered systems and is ideal for low power switching applications. This FET has a breakdown voltage of 5.8 volts and a maximum drain current of 11 amps, making it suitable for a variety of applications.

The ZVN0540A utilizes a field effect-structure with an N-channel enhancement-type construction, consisting of a drain, source and gate. This transistor is specialized for switching applications and is able to rapidly move off of the “ON” state as soon as the gate voltage is less than the drain voltage.

The ZVN0540A works by creating a depletion area at the gate terminal that is able to control a flow of electrons between the source and drain electrodes. When the gate voltage is applied, electrons fill the depletion area, creating a conducting channel between the source and drain electrodes. When the gate voltage is removed, the electrons leave the depletion area, creating a non-conductive channel.

Since the ZVN0540A is a logic-level device, it is also able to turn on with a low gate voltage, between 1-2 volts instead of the 3-5 volts of traditional FETs. This feature makes it ideal for applications that require a slower on-state ramp-up, while remaining sensitive to switching with a low gate voltage.

The ZVN0540A is suitable for a variety of applications, such as power switching in small DC-to-DC converters, voltage regulators, motor drives, and battery chargers. It can also be used in low-power AC-to-DC converters, as well as automotive and consumer electronics.

The ZVN0540A is a general purpose, low-voltage device with a variety of uses. With its drain current of 11 amps, breakdown voltage of 5.8 volts, and low gate voltage requirements, it is ideal for applications that require a low voltage switch with a fast turn-on time.

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