ZXMC3A16DN8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMC3A16DN8TR-ND |
Manufacturer Part#: |
ZXMC3A16DN8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 4.9A, 4.1A 1.25W ... |
DataSheet: | ZXMC3A16DN8TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A, 4.1A |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 17.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 796pF @ 25V |
Power - Max: | 1.25W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The ZXMC3A16DN8TA is an array of MOSFETs commonly used in circuit designs. It is a type of discrete semiconductor device based on field-effect technology, more specifically called a Metal-Oxide-Silicon Field-Effect Transistor (MOSFET), which works on the principle of controlling current or voltage by means of an electric field. The ZXMC3A16DN8TA is a triple MOSFET array package, with three transistors in parallel, each running at either 1 or 10 amps in drain current. It also has low feedback capacitance, as well as a zero-gate-voltage drain current that can handle both high-side and low-side switching, making it highly suitable for a wide range of applications.
As an array of field effect transistors, ZXMC3A16DN8TA is suitable for use in a wide range of applications. It is particularly well-suited for systems and operations that require fast switching and response, such as motor control and power switching. The ZXMC3A16DN8TA can be used in analogue and digital circuits, allowing for precise current or voltage control for the stated parameters. Additionally, with the low capacitance and high speed switching, this type of transistor array is ideal for use in high-frequency and high-bandwidth applications. Furthermore, the low parasitic capacitance makes it suitable for use in communications and data processing circuits.
The ZXMC3A16DN8TA works by using the principle of field effect technology. This is a type of semiconductor device that relies on an electric field in order to control a current or a voltage. It works on the basis of a thin "gate" that is located between the drain and the source. The gate is connected to the voltage supply, which applies the electric field. The electric field that is generated governs how much current the device can handle, allowing for precise control.
When applied to the ZXMC3A16DN8TA, the electric field will cause one of the transistors to be on, allowing current to flow from the drain to the source. This can be adjusted depending on the voltage applied to the gate. The zero-gate-voltage drain current means that the current does not drop to zero even when the gate voltage is removed, allowing for uniform response and greater reliability. The high-side and low-side switching capabilities make this array suitable for a range of tasks.
The ZXMC3A16DN8TA is a highly versatile type of array and is suitable for a wide range of applications. Its fast switching speed and low parasitic capacitance make it well-suited for high-frequency and high-bandwidth applications, while its precise voltage and current control make it suitable for a range of tasks, from motor control to data processing. Thanks to the field effect technology at its core, the ZXMC3A16DN8TA array is an incredibly powerful and reliable device in any circuit.
The specific data is subject to PDF, and the above content is for reference
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