ZXMC3A18DN8TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMC3A18DN8TR-ND |
Manufacturer Part#: |
ZXMC3A18DN8TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N/P-CH 30V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 5.8A, 4.8A 1.8W S... |
DataSheet: | ZXMC3A18DN8TA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A, 4.8A |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Power - Max: | 1.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The ZXMC3A18DN8TA is an enhancement-mode MOSFET array device, specifically designed for applications where a high density of switching is required. The device consists of four independent N-channel enhancement mode transistors with a common source, providing ultra-low on-resistance along with on-resistance matching between channels. It is available in a variety of packages.
The ZXMC3A18DN8TA has wide applications across a variety of fields. The integrated, low on-resistance of the device make it highly suitable for use in DC-DC converter circuits such as buck and boost converters, providing high efficiency and minimal power losses. Its low capacitance makes it well suited for high-speed switching applications such as switching power supplies, high-speed switching in communications systems and data transmission equipment. Its high threshold voltage allows for enhanced noise immunity in applications requiring noise-sensitive switching. Lastly, the device can also be used in automotive systems, providing intelligent and reliable control of multiple channels.
The ZXMC3A18DN8TA primarily functions by passing an electric current across its N-channel MOSFETs, which act as a switch to control the flow of current. When the gate voltage is higher than the source voltage, the current will flow through the MOSFET. Conversely, when the gate voltage is less than the source voltage, the MOSFET will be non-conductive and no current will flow. The benefit of an integrated MOSFET array is to simplify the design process of complex circuitry. With the ZXMC3A18DN8TA’s integrated N-channel MOSFET array, only one MOSFET is required for each switching operation, eliminating the need for multiple MOSFETs in parallel.
In summary, the ZXMC3A18DN8TA is a four-channel N-channel MOSFET array device. The device is suitable for a variety of applications ranging from DC-DC converters to high-speed switching systems. By providing enhanced noise immunity and low capacitance, the ZXMC3A18DN8TA ensures efficient and reliable operation in a range of applications. Additionally, its integrated MOSFET array simplifies the design process of complex circuitry.
The specific data is subject to PDF, and the above content is for reference
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