ZXMC4559DN8TA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	3.6A, 2.6A
Rds On (Max) @ Id, Vgs:	55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1063pF @ 30V
Power - Max:	1.25W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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ZXMC4559DN8TA is a dual N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) that is part of a family of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) developed by Zetex Semiconductor. The dual N-channel enhancement mode MOSFETs is a type of MOSFET that is part of a larger family of transistors known as Field-Effect transistors (FETs). Zetex Semiconductor’s MOSFETs are used in a wide range of applications including: switched mode power supplies, power converters, motor controllers, robotics, medical instrumentation and automotive applications. The ZXMC4559DN8TA is a device that provides the user with a high level of protection against the possible damaging effects of electrical overloads and overvoltage conditions. It features a high-efficiency gate drive circuit and superior dielectric breakdown characteristics. The gate drive circuit is the part of the device that is responsible for controlling the operation of the device, and the dielectric breakdown characteristics refer to the device\'s ability to withstand a given amount of electrical current without overloading or otherwise damaging the device. The ZXMC4559DN8TA is also designed with a low on-resistance (RDS(ON)) rating, which is a measure of the device’s ability to restrict the current flowing through the device. A lower RDS(ON) rating is desirable, as it indicates that the device is better able to withstand the effects of electrical overloads and overvoltage conditions. The ZXMC4559DN8TA is designed for use in arrays and is commonly used in applications that require extremely fast switching speeds and low voltage operation. The device has an advanced internal charge pump circuit, which enables it to operate in lower voltage environments. Its low on-resistance rating allows it to be used in applications requiring high levels of power dissipation. The device can also be used in applications requiring high levels of reliability and performance. In terms of its working principle, the ZXMC4559DN8TA operates on the principle of MOSFETs, which is based on the electrical field-effect that occurs when the MOSFET is placed between two electrical contacts. When the MOSFET is placed between the two contacts, a voltage difference is established, and current will flow from one of the contacts to the other depending on the state of the MOSFET’s gate. If the gate is positively charged, current will flow from the drain to the source, whereas if it is negatively charged, current will flow from the source to the drain. When the ZXMC4559DN8TA is placed in an array, it is able to effectively serve as a switch, allowing for the current to be regulated and preventing it from exceeding the device’s rated current limit. The device is able to switch faster than conventional bipolar transistors, and is able to handle higher power applications. In conclusion, the ZXMC4559DN8TA is a versatile, robust and high-efficiency MOSFET array that is widely used in a variety of applications such as switched mode power supplies, power converters, motor controllers, robotics, medical instrumentation, and automotive applications. The device’s low on-resistance rating and gate drive circuit make it well-suited for applications that require fast switching speeds, low voltage operation, and high levels of power dissipation. The ZXMC4559DN8TA is a great choice for anyone looking for a reliable and robust MOSFET array.

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