ZXMC6A09DN8TA Allicdata Electronics

ZXMC6A09DN8TA Discrete Semiconductor Products

Allicdata Part #:

ZXMC6A09DN8TATR-ND

Manufacturer Part#:

ZXMC6A09DN8TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 60V 8-SOIC
More Detail: Mosfet Array N and P-Channel 60V 3.9A, 3.7A 1.8W S...
DataSheet: ZXMC6A09DN8TA datasheetZXMC6A09DN8TA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The ZXMC6A09DN8TA is a type of Power MOSFET package, which is classified as part of a larger grouping, Transistors - FETs, MOSFETs - Arrays. Power MOSFETs are highly efficient and effective transistors that are used in very wide range of applications.

A Power MOSFET is different from a regular transistor in several ways. While regular transistors conduct electricity between two regions of a semiconductor material, a Power MOSFET uses an insulated-gate in order to control the flow of current between two regions of a semiconductor material. This is referred to as the insulated gate field effect transistor (IGFET). One of the key advantages of a Power MOSFET is that it has a much higher switching speed than a regular transistor, but is still able to efficiently control the flow of current over a wide range of current ratings.

The ZXMC6A09DN8TA Power MOSFET is designed as an array of eight FETs. Each of the eight FETs is individually accessible and can be separately programmed by the user. The ZXMC6A09DN8TA is a highly advanced device and is designed to be used in a wide range of applications, including power regulation, motor and switch control, high current buffering, and voltage level shifting. It is also used in applications requiring high integrity switching, such as those found in telecommunications and industrial automation systems.

The working principle of the ZXMC6A09DN8TA is relatively simple but highly effective. The device utilises a completely insulated gate system, in which each FET is controlled by an external voltage source. When the voltage source is applied, the device will cause an electrical current to flow through the FET. This current is then used to control the flow of electrical current through the source and drain. The current can be controlled by applying different input voltages to the device, thus providing the user with an accurate and highly efficient way of controlling their electrical current levels.

The ZXMC6A09DN8TA is designed to be highly efficient and effective. It has a very low power consumption, making it an ideal choice for applications where power is of utmost importance. The device is also highly reliable due to its advanced design and technology. The device has a wide range of operating temperatures and is capable of efficiently handling high current ratings. Also, due to its high switching speed, the device is perfectly suited for applications requiring high reliability.

In conclusion, the ZXMC6A09DN8TA Power MOSFET is an extremely efficient and reliable transistor device. Its insulated-gate technology makes it a perfect choice for a wide range of applications, from motor and switch control to voltage level shifting. The device is highly reliable and efficient, and its low power consumption makes it an ideal choice for applications where power is of utmost importance. The device is also capable of handling high current ratings, making it well suited for applications requiring high reliability. Overall, the ZXMC6A09DN8TA is an effective and reliable device that can be used in a variety of applications requiring efficient and reliable power regulation.

The specific data is subject to PDF, and the above content is for reference

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