ZXMC4A16DN8TC

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	4A, 3.6A
Rds On (Max) @ Id, Vgs:	50 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	770pF @ 40V
Power - Max:	1.8W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

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Introduction

ZXMC4A16DN8TC is a 4A, 16V N-Channel MOSFET Array. It is composed of four N-Channel power MOSFETs with one drain terminal and gate control, making it an ideal choice for load switching and biasing circuit applications. It has a unique ability to eliminate some of the complex inter-modulation and switching noise issues which cause problems in some other load based designs. It consists of two series connected P-Channel power MOSFETs, with one gate connected to its respective drain. The ZXMC4A16DN8TC is designed to be used in a variety of applications such as load switching, voltage and current sensing, and power management.

Features

The ZXMC4A16DN8TC offers a wide range of features that are designed to improve its performance in a number of applications. It has a low RDS (on) which allows it to reduce power loss in a load switching and biasing circuit. It also has a high operating temperature range, which allows for use in harsh environments. The ZXMC4A16DN8TC has a high source-drain breakdown voltage, which allows it to be used in both load switching and voltage sensing applications. Its low gate threshold voltage enables it to be used in low threshold load switching applications and to prevent false triggering in power management circuits.

Application Field

The ZXMC4A16DN8TC has a wide range of applications across multiple industries. It is commonly used in load switch and biasing circuits, as well as in power management applications. It is ideal in applications such as consumer electronics, automotive, industrial, and medical equipment, where its low on resistance, high operating temperature range, and low-gate threshold voltage make it suitable for use. It can also be used in motor control circuit applications, where its low gate threshold voltage prevents false triggering of the motor controller.

Working Principle

The ZXMC4A16DN8TC operates on the principle of an n-channel MOSFET array. The array consists of four independent N-channel power MOSFETs, with one gate connected to its respective drain. An application voltage is applied to the gate of each MOSFET, which then activates the MOSFET and allows current to flow through it and out of the drain terminal. The amount of current flowing through each MOSFET is determined by the application voltage as well as the amount of drain-source resistance of each power MOSFET. The ZXMC4A16DN8TC is optimized for low-bias applications, where the application voltage is low and the drain-source resistance is high.

Conclusion

The ZXMC4A16DN8TC is a 4A, 16V N-Channel MOSFET Array with a wide range of features making it suitable for multiple applications. It has a low RDS (on) which allows it to reduce power loss in a load switching and biasing circuit and a high operating temperature range which allows for use in harsh environments. It has a high source-drain breakdown voltage, which allows it to be used in both load switching and voltage sensing applications. Its low gate threshold voltage makes it suitable for use in low threshold load switching applications and to prevent false triggering in power management circuits.

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