ZXMC4559DN8TC Allicdata Electronics

ZXMC4559DN8TC Discrete Semiconductor Products

Allicdata Part #:

ZXMC4559DN8TCDITR-ND

Manufacturer Part#:

ZXMC4559DN8TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
More Detail: Mosfet Array N and P-Channel 60V 3.6A, 2.6A 2.1W S...
DataSheet: ZXMC4559DN8TC datasheetZXMC4559DN8TC Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The ZXMC4559DN8TC is a low cost, low power, high performance 8-channel MOSFET array. It is designed for applications such as power switches, switching of high-voltage and high currents, and amplifier stages. It is one of the most popular MOSFETs in the market and comes in two versions, the ZXMC4559DN8TC and the ZXMC4559N8TC. The ZXMC4559DN8TC includes four N-channel MOSFETs in an SOIC-8 package while the ZXMC4559N8TC includes four P-channel MOSFETs in an SOIC-8 package. They are both ideal for a variety of applications where switching high currents, such as those encountered in motor control, is needed.

The ZXMC4559DN8TC has excellent power and thermal ratings for a wide range of operating conditions, making it a great choice for high-current applications. It has a maximum power rating of 32W, a voltage rating of 60V, and a wide temperature range of -40°C to +175°C. It also has low on-resistance (<0.15 Ω), excellent gate turn-off performance, and can be used in a wide range of switching and amplifier stages.

The ZXMC4559DN8TC features an integrated charge pump circuit, which allows for faster switching of the MOSFETs. This eliminates the need for external diodes, simplifying the design of the power circuit. The charge pump also reduces power losses and improves efficiency. The ZXMC4559DN8TC also features a high temperature range, making it suitable for use in high-temperature environments.

The ZXMC4559DN8TC is suitable for use in a wide range of applications, such as motor control, power switches, and amplifier stages. It is also ideal for use in automotive electronics, industrial systems, as well as consumer electronics. Its integrated charge pump circuit and low resistance make it a great choice for high-current applications.

The working principle of the ZXMC4559DN8TC is simple but effective. When the gate voltage is applied, the gate-source voltage creates a channel between the drain and the source. This channel allows current to flow in either direction. When the gate voltage is removed, the channel closes, allowing no current to flow. This makes the MOSFET a great switch for high current or high voltage applications.

The ZXMC4559DN8TC is a highly reliable, cost-effective and efficient MOSFET array that provides excellent performance in high-current applications. Its compact design and high switching speed make it an ideal choice for a variety of applications. Its low-power requirements and wide temperature range also make it suitable for use in challenging environments. Its integrated charge pump circuit and low resistance make it a great choice for high-current applications.

The specific data is subject to PDF, and the above content is for reference

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