| Allicdata Part #: | ZXMC3A17DN8TC-ND |
| Manufacturer Part#: |
ZXMC3A17DN8TC |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N/P-CH 30V 8SOIC |
| More Detail: | Mosfet Array N and P-Channel 30V 4.1A, 3.4A 1.25W ... |
| DataSheet: |  ZXMC3A17DN8TC Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 4.1A, 3.4A |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs: | 12.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 25V |
| Power - Max: | 1.25W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOP |
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The ZXMC3A17DN8TC is a modular semiconductor device used in the application fields of Transistors-FETs, MOSFETs-Arrays. It is a three-terminal cell array, with a wide dynamic range and high performance, delivering excellent linearity and high accuracy. In particular, the ZXMC3A17DN8TC features an advanced power electronics interface, allowing for both low and high power density applications.
The ZXMC3A17DN8TC is an insulated gate MOSFET (IGMOS) array, employing tiny cells of three transistors in series. A simplified illustration of the ZXMC3A17DN8TC can be seen in the following figure.
As we can observe, its three transistors are connected with each other to form a lattice-type structure. This allows the ZXMC3A17DN8TC to operate by shifting the total electrical resistance of the array in order to change the voltage or power supplied to a load.
The ZXMC3A17DN8TC works as an integrated circuit, called an IGMOS array, by utilizing its three sources, two drains, and two gates. When a voltage is applied to the two gates of the array, it adjusts resistance across its three transistors, creating a current path that controls the output voltage of the array. The voltage is then regulated through the control of the two gates, facilitating both low and high power density applications.
The ZXMC3A17DN8TC is a great choice for applications where tight linearity and high accuracy is required, such as high-frequency inverters and power converters. Thanks to its power electronics interface, it can be used to regulate the voltage and power of a variety of devices. Additionally, due to its impressive dynamic range, the ZXMC3A17DN8TC can be easily adjusted for accurate current control under various conditions.
Overall, the ZXMC3A17DN8TC is an advanced and efficient MOSFET array well-suited for power electronics applications. Its three source and two drain design allows for precise voltage and current control, making it an excellent choice for high-quality, high-power density applications.
The specific data is subject to PDF, and the above content is for reference
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