ZXMC3A16DN8TC Discrete Semiconductor Products

The ZXMC3A16DN8TC is part of a family of high-performance Field Effect Transistor (FET) arrays from Zilog. It is a 4-channel N-type metallic oxide semiconductor FET (MOSFET) array featuring a low amount of input/output capacitance, low RDS(ON) resistance, and fast switching speeds.

Low capacitance and low RDS(ON) resistance makes the ZXMC3A16DN8TC an ideal choice for use in applications that requires very fast switching speeds and low power consumption. The FET array is generally used in power regulation, pulse power switches, high-speed communications circuits, and RF switching circuits. In addition, it can also be used in clock drivers, motor drivers, power converters, and in applications which require high-speed or low-power switching.

The working principle of the ZXMC3A16DN8TC FET array is simple. It’s made up of four N-type FETs that are designed to operate at very high speeds. By applying an input voltage to the gate of the FETs, an electric field will be created between the gate and the source. The electric field will cause a shift in the FET’s electron concentration across the junction, causing current to flow through the channel. The current that flows through the channel is proportional to the input voltage applied to the FET’s gate.

The ZXMC3A16DN8TC FET array is packaged in an 8-pin DIP format that’s designed for surface mounting. It has an operating temperature range of -55C to +150C and an operating voltage range of 4.5V to 18V. It has a maximum drain source voltage (VDSS) of 16V, a maximum total gate charge (Qg) of 23.9nC and a maximum drain-source on-state resistance (RDS[ON]) of 4.2W.

In summary, the ZXMC3A16DN8TC FET array is an ideal choice for a wide range of applications that requires very fast switching speeds and low power consumption. It’s fast switching speeds, low input/output capacitance, and low RDS(ON) resistance makes it an ideal choice for applications such as power regulation, pulse power switches, high-speed communications circuits, and RF switching circuits.