ZXTP23015CFHTA Allicdata Electronics

ZXTP23015CFHTA Discrete Semiconductor Products

Allicdata Part #:

ZXTP23015CFHTR-ND

Manufacturer Part#:

ZXTP23015CFHTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 15V 5A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 15V 5A 270MHz 1.25W S...
DataSheet: ZXTP23015CFHTA datasheetZXTP23015CFHTA Datasheet/PDF
Quantity: 21000
Stock 21000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 190mV @ 240mA, 6A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.25W
Frequency - Transition: 270MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: ZXTP23015C
Description

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Transistors come in various configurations depending on their intended application and can be used for a wide range of operations and functions. The ZXTP23015CFHTA is a Single Bipolar Junction Transistor (BJT), commonly used in low-power applications such as switching and amplifying electronic signals. As a result, it is widely used in both consumer electronics and application-specific integrated circuits (ASIC) for automotive, medical and industrial automation applications.

A BJT is a three-terminal active semiconductor device with a tiny current-carrying region between two regions called emitter and collector. BJTs belong to the family of current-controlled devices, and they can be used as amplifiers or switches. The base region is the small region at the center of the BJT that is responsible for the tiny current flow between the emitter and collector regions.

The ZXTP23015CFHTA is a NPN transistor with a typical current gain of 75 at an operating current of 10 mA. The package size is TO-92, which is a widely used packaging type and highly suitable for automated assembly. The emitter and base are connected internally, and the base and collector are also connected internally, with the collector being the third terminal. The maximum voltage rating between the emitter and collector is 30 volts, while the maximum power rating of the device is 0.68 watts.

In the field of application, the ZXTP23015CFHTA is largely used as a switching device in low-power applications such as automotive, medical and industrial automation. The device can be used to switch between different power stages by providing just enough current to turn on the other stage. This makes it suitable for applications where precision and reliability are paramount. In addition, the transistor can be used for noise filtering and signal conditioning applications.

The working principle of the ZXTP23015CFHTA is relatively simple. When the base-emitter voltage (VBE) is increased, a small current flow starts from the base to the emitter, which allows a larger current to flow from the collector to the emitter. The ratio of the collector current to the base current is known as the current gain of the device, and for this particular transistor, it is 75.

This device can also act as a transistor amplifier when the input signal is applied to the base, and the output signal is taken from the collector. The output signal is amplified by the current gain of the device, which indicates the amplification factor of the device. The ZXTP23015CFHTA can also be used as a regulator, controlling the output voltage relative to the input voltage.

In conclusion, the ZXTP23015CFHTA is a Single Bipolar Junction Transistor (BJT) that is used in low-power applications such as automotive, medical and industrial automation. This transistor has a typical current gain of 75 at an operating current of 10 mA and a maximum voltage rating between the emitter and collector of 30 volts. The device can be used for switching, noise filtering and signal conditioning applications, as well as for transistor amplification and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

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