ZXTP08400BFFTA Discrete Semiconductor Products

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Bipolar junction transistors (BJTs) consist of two p-n junctions that are fabricated on a single chip. These devices can be used for many applications and are the most common type of transistors. The ZXTP08400BFFTA is one such BJT device. This article will discuss the application field and working principle of the ZXTP08400BFFTA.

The ZXTP08400BFFTA is a silicon NPN bipolar junction transistor. It is designed for applications where high speed switching and high current-gain is desired. It has a very low saturation voltage, making it ideal for use in junction transistor applications such as high-speed switching and motor control. The device features a maximum collector-emitter voltage of 80V, a maximum collector current of 3A, and a maximum power dissipation of 35W. The device has a wide scale current gain of 40 to 115. It also has a high frequency of 1500 MHZ, making it very suitable for high-speed switching applications.

The ZXTP08400BFFTA works by controlling the power output from the collector to the emitter. It consists of three terminals that are labeled base, collector and emitter. The base is the voltage control terminal, and the collector is the current output terminal. The emitter is the voltage output terminal. The device works by controlling the amount of current that is allowed to flow between the collector and emitter. This is accomplished by controlling the voltage on the base terminal. When the base voltage is high, more current is allowed to pass between the collector and emitter, and when the base voltage is low, less current is allowed to pass.

The ZXTP08400BFFTA can be used in a variety of applications. It is often used in power supplies, DC motor controls and general power switching. It can also be used in instrumentation applications such as voltage amplifiers, sample and hold circuits and static relays. The device is also well suited for pulse-width modulation control applications.

In summary, the ZXTP08400BFFTA is a single bipolar junction transistor (BJT) designed for switching and high current-gain applications. It is made from silicon NPN materials and features a maximum collector voltage of 80V, collector current of 3A and a maximum power dissipation of 35W. The device has a wide scale current gain of 40 to 115 and a high frequency of 1500 MHZ. It is ideal for high-speed switching applications and can be used in various instrumentation, power and control systems.

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