ZXTP25012EFHTA Allicdata Electronics

ZXTP25012EFHTA Discrete Semiconductor Products

Allicdata Part #:

ZXTP25012EFHTR-ND

Manufacturer Part#:

ZXTP25012EFHTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 12V 4A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 12V 4A 310MHz 1.25W S...
DataSheet: ZXTP25012EFHTA datasheetZXTP25012EFHTA Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 210mV @ 400mA, 4A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Power - Max: 1.25W
Frequency - Transition: 310MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: ZXTP25012E
Description

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The ZXTP25012EFHTA is a single-stage bipolar junction transistor (BJT). It belongs to the silicon controlled rectifier (SCR) family and is used in low-noise and small-signal applications. This device is also known as an enhancement mode MOSFET or E-MOSFET.

The ZXTP25012EFHTA is an NPN type of transistor which means it operates by allowing current to flow from the collector to the base when a positive voltage is applied. It consists of a P-type semiconductor sandwiched between the N and the P-doped layers. This transistor is not polarity sensitive, which means it can be used in circuits powered by both AC or DC.

It features low-noise and low-power operations, making it ideal for use in signal processing and audio applications. It is designed to be used as a voltage switching device, allowing for accurate control of currents between different stages. Its low input and output capacitance allow for faster switching speeds and ensure greater accuracy. This makes it suitable for use in radio emitter circuits.

The ZXTP25012EFHTA has an operating temperature range of 0°C to 140°C allowing it to be used in extreme conditions. It also has a low saturation voltage, which means that it can be used at low power levels without compromising on performance. However, it also has a relatively low operating voltage of 5V, making it unsuitable for use with high power circuits.

In terms of its applications, the ZXTP25012EFHTA is well suited for use as an amplifier and in voltage and current circuitry. It can be used in a wide range of applications such as radio and audio equipment, devices based on transistor-transistor logic (TTL) and integrated circuits (IC), and signal processing devices. It is also used in switching and digital signal processing applications, allowing for accurate control of current between different stages.

In terms of its working principle, the ZXTP25012EFHTA uses a combination of small base and emitter regions, as well as an N-type material. When a voltage is applied to the transistor, it allows current to flow from the collector to the base. This current passes through the base-emitter junction, which is where it is controlled by the applied voltage. The current is then amplified and regulated, allowing for precise control of current between different stages.

The ZXTP25012EFHTA is an excellent choice for use in low-noise and small-signal applications. It has low input and output capacitance for faster switching speeds, a wide operating temperature range, and low saturation voltage. This transistor can operate in a variety of contexts, from radio and audio equipment to integrated circuits, making it well suited for a number of different applications.

The specific data is subject to PDF, and the above content is for reference

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