Cap alum 1000uf 15v radial - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
ZXT10N15DE6TC-N D	ZXT10N15DE6TC	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 4A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Power - Max: 1.1W Frequency - Transition: 120MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6 Base Part Number: ZXT10N15D	1000 Order	1+: $0
ZTX788ASTOA-ND	ZTX788ASTOA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 330mV @ 200mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 1V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible) Base Part Number: ZTX788A	1000 Order	1+: $0
SMMBT2369LT1G-N D	SMMBT2369LT1G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 225mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	1000 Order	9000+: $0.023
2SA17380RLTR-ND	2SA17380RL	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 1.5GHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 Base Part Number: 2SA1738	1000 Order	1+: $0
2SD1048-7-TB-EO STR-ND	2SD1048-7-TB-E	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 80mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	12000 Order	3000+: $0.0585 6000+: $0.0526 15000+: $0.0468 30000+: $0.0439 75000+: $0.039
ZTX788BSTZ-ND	ZTX788BSTZ	Diodes Incorporated	View more Packaging: Tape & Box (TB) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: -55C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible) Base Part Number: ZTX788B	1000 Order	2000+: $0.3114
ZXTN25015DFHTR- ND	ZXTN25015DFHTA	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 215mV @ 100mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 1.25W Frequency - Transition: 240MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: ZXTN25015	1000 Order	--
CP396V-2N2369A- CT20-ND	CP396V-2N2369A- CT20	Central Semiconductor Corp	View more Packaging: Tray Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	4 Order	1+: $95.9175 10+: $91.287 25+: $88.2
2N3564-ND	2N3564	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Frequency - Transition: 400MHz Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	1000 Order	--
6585_2N4209-ND	6585_2N4209	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 800mV @ 100A, 1mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 1mA, 5V Power - Max: 300mW Frequency - Transition: 850MHz Operating Temperature: 200C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
2N4209-ND	2N4209	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 150mV @ 100A, 1mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 300mV Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Base Part Number: 2N4209	240 Order	--
2N3013-ND	2N3013	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 300nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 360mW Frequency - Transition: 350MHz Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Base Part Number: 2N3013	1000 Order	--
2N3646-ND	2N3646	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 200mW Frequency - Transition: 350MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	1000 Order	1+: $0
CMPT3646TR-ND	CMPT3646 TR	Central Semiconductor Corp	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 350mW Frequency - Transition: 350MHz Operating Temperature: -65C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	1000 Order	--
1086-20728-ND	JAN2N2369AUA	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/317 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	1000 Order	100+: $24.3432
1086-2680-ND	JANTX2N2369AUB	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/317 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 400mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	1000 Order	100+: $17.308
2N2369-ND	2N2369	ON Semiconductor	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 360mW Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Base Part Number: 2N2369	1000 Order	--
1086-16219-ND	JANTX2N708	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/312 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 25nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 360mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	1000 Order	1+: $0
2N4264-ND	2N4264	Central Semiconductor Corp	View more Packaging: Bulk Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 100mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 1V Power - Max: 625mW Frequency - Transition: 350MHz Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	1000 Order	5000+: $0.1343
1086-16218-ND	JAN2N708	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/312 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA Current - Collector Cutoff (Max): 25nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Power - Max: 360mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	1000 Order	1+: $0
1086-20729-ND	JANTXV2N2369AUA	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/317 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	1000 Order	100+: $31.1137
JANS2N2369AUBC- ND	JANS2N2369AUBC	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/317 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	1000 Order	50+: $130.507
1086-2328-ND	JAN2N2369AUB	Microsemi Corporation	View more Series: Military, MIL-PRF-19500/317 Packaging: Bulk Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Power - Max: 360mW Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	1000 Order	100+: $14.1944
CP396V-2N2369A- CT-ND	CP396V-2N2369A- CT	Central Semiconductor Corp	View more Packaging: Tray Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 500MHz Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	1000 Order	1+: $0
1086-16217-ND	JAN2N706	Microsemi Corporation	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	1+: $0
1086-16085-ND	JANTX2N2481	Microsemi Corporation	View more Series: * Part Status: Active	1000 Order	1+: $0
2N1724AMS-ND	2N1724A	Microsemi Corporation	View more Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 100A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 15V Power - Max: 3W Operating Temperature: -65C ~ 200C (TJ) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	1000 Order	100+: $242.55
BUK9C10-65BIT,1 18-ND	BUK9C10-65BIT,1 18	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 65V Current - Continuous Drain (Id) @ 25C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59.6nC @ 5V Vgs (Max): 15V Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 25V Power Dissipation (Max): 171W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	1+: $0

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