JANS2N2369AUBC Allicdata Electronics
Allicdata Part #:

JANS2N2369AUBC-ND

Manufacturer Part#:

JANS2N2369AUBC

Price: $ 143.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN TRANSISTOR
More Detail: Bipolar (BJT) Transistor NPN 15V 360mW Surface M...
DataSheet: JANS2N2369AUBC datasheetJANS2N2369AUBC Datasheet/PDF
Quantity: 1000
50 +: $ 130.50700
Stock 1000Can Ship Immediately
$ 143.56
Specifications
Series: Military, MIL-PRF-19500/317
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Power - Max: 360mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
Description

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Transistors - Bipolar (BJT) - Single


JANS2N2369A-UBC Application Field and Working Principle

The JANS2N2369A-UBC is an advanced common emitter NPN silicon underbase transistor. It is used in many different applications, including power switching, audio amplifier, interface circuits, and logic circuits. The device was designed by Trans-Lux Corporation, which is one of the leading manufacturers of integrated circuits (ICs).

The JANS2N2369A-UBC has the following operational characteristics:

  • NPN silicon underbasing transistor
  • Low saturation voltages
  • Low noise and high gain
  • Wide frequency and power range
  • High current and power handling capability

The JANS2N2369A-UBC is built with a single-side surface mount (SSSM) structure. This structure reduces the size and increases the package\'s thermal resistance by ten times that of conventional designs. The device also features a low-noise, high-gain current controllable amplifier circuit with overvoltage protection.

The JANS2N2369A-UBC works on the principle of the transistor action, which is made up of three layers of semiconductor material. The first layer is known as the base, while the other two are known as the emitter and the collector. When an input is applied to the base, the current flow is increased between the emitter and collector. This allows the device to function as an amplifier or switch.

The JANS2N2369A-UBC is typically used in high-power applications such as audio amplifiers, power switching, and logic circuits. The device is often used in audio amplifier designs, as it is capable of delivering large amounts of current and power. In power switching applications, the JANS2N2369A-UBC can be used to control the transfer of power between two points.

The flexibility of the JANS2N2369A-UBC\'s design makes it suitable for numerous applications. The device has a wide range of power and frequency capabilities, making it an ideal choice for a variety of applications. The device is also designed to handle high currents, making it an ideal choice for high power switching applications.

The specific data is subject to PDF, and the above content is for reference

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