| Allicdata Part #: | 1086-20728-ND |
| Manufacturer Part#: |
JAN2N2369AUA |
| Price: | $ 26.78 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 15V |
| More Detail: | Bipolar (BJT) Transistor NPN 15V 360mW Through H... |
| DataSheet: | JAN2N2369AUA Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 24.34320 |
| Series: | Military, MIL-PRF-19500/317 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 15V |
| Vce Saturation (Max) @ Ib, Ic: | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max): | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 1V |
| Power - Max: | 360mW |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package: | TO-18 (TO-206AA) |
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The JAN2N2369AUA is a single bipolar junction transistor (BJT) designed for use in a wide range of applications. It is designed to work with a wide range of voltages and currents up to 1 Amp, making it an ideal choice for applications requiring high-current carrying capabilities. The JAN2N2369AUA is also capable of operating over a wide temperature range, making it suitable for use in applications with varying environmental conditions.The JAN2N2369AUA has a collector-emitter voltage (Vce) of 40V, an emitter-base voltage (Veb) of 5V and a collector current (Ic) of up to 1A. It has a forward current gain (hFE) of between 40 and 500 and an power dissipation (PD) of up to 1.5 Watt. The JAN2N2369AUA has an operating temperature range from -55 to +150 degrees Celsius.The JAN2N2369AUA can be used for general switching and amplification purposes. It is well-suited for amplifier circuits, with its high hFE providing a good gain range and its wide voltage and current range making it suitable for driving and controlling a wide range of loads. The JAN2N2369AUA is also suitable for use in power supply circuits, as its high current and power rating make it an excellent choice for controlling and regulating higher-voltage applications.When used in amplifier circuits, the JAN2N2369AUA works by allowing current to pass through the base-emitter junction when a small amount of current is applied to the base. This current is then amplified by the transistor’s current gain (hFE), resulting in a larger current flowing through the collector-emitter junction. This larger current can then be used to drive a load, such as a speaker or a motor.In power supply circuits, the JAN2N2369AUA works by allowing current to pass through the collector-emitter junction when a small amount of current is applied to the base. This current is then amplified by the transistor’s current gain (hFE), resulting in a larger current flowing through the collector-emitter junction. This larger current can then be used to regulate the output voltage of the circuit, allowing for a stable input and output voltage.In both of these circuits, the JAN2N2369AUA’s wide temperature range and high current gain are key features in allowing the transistor to operate accurately and reliably in a wide range of environmental conditions. The wide temperature range allows the transistor to operate over a range of temperatures, while the high current gain ensures that the transistor is able to accurately modulate the current passing through the transistor, resulting in an accurate and stable output.In conclusion, the JAN2N2369AUA is an excellent choice for applications requiring high-current carrying capabilities and a wide range of environmental conditions. Its wide voltage and current range, high current gain, and wide temperature range make it an ideal choice for amplifier and power supply circuits.
The specific data is subject to PDF, and the above content is for reference
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JAN2N2369AUA Datasheet/PDF