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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
C161KLMHAFXQMA1 -ND	C161KLMHAFXQMA1	Infineon Technologies	View more Series: C16xx Packaging: Tray Part Status: Last Time Buy Core Processor: C166 Core Size: 16-Bit Speed: 20MHz Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 63 Program Memory Type: ROMless RAM Size: 1K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Oscillator Type: External Operating Temperature: -40C ~ 85C (TA) Package / Case: 80-QFP Supplier Device Package: P-MQFP-80-1 Base Part Number: SA*C161K	1000 Order	504+: $7.0037
XE162FN16F80LAA FXUMA1TR-ND	XE162FN16F80LAA FXUMA1	Infineon Technologies	View more Series: XE16x Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: CANbus, EBI/EMI, IC, LINbus, SPI, SSC, UART/USART, USI Peripherals: IS, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH RAM Size: 18K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 9x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 64-LQFP Exposed Pad Supplier Device Package: PG-LQFP-64-6 Base Part Number: SA*XE162FN	1000 Order	1+: $0
BCR402WE6327HTS A1TR-ND	BCR402WE6327HTS A1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Linear Internal Switch(s): Yes Number of Outputs: 1 Voltage - Supply (Min): 1.2V Voltage - Supply (Max): 18V Voltage - Output: 18V Current - Output / Channel: 60mA Applications: Lighting Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4 Base Part Number: BCR402	1000 Order	1+: $0
BSS138NH6327XTS A2TR-ND	BSS138NH6327XTS A2	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 26A Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
IRGS4615DPBF-ND	IRGS4615DPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Power - Max: 99W Switching Energy: 70J (on), 145J (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25C: 30ns/95ns Test Condition: 400V, 8A, 47 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	1000 Order	1+: $0
IRG7CH50UED-ND	IRG7CH50UED	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
FZ1600R17HP4B21 BOSA2-ND	FZ1600R17HP4B21 BOSA2	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 1600A Power - Max: 10500W Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 130nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
IRGTI090U06-ND	IRGTI090U06	Infineon Technologies	View more Part Status: Obsolete Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Power - Max: 298W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 90A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 5.8nF @ 30V Input: Standard NTC Thermistor: No Mounting Type: Chassis Mount Package / Case: INT-A-PAK (3 + 4) Supplier Device Package: INT-A-PAK	1000 Order	1+: $0
FP100R06KE3_B16 -ND	FP100R06KE3_B16	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
BFP540FESDH6327 XTSA1TR-ND	BFP540FESDH6327 XTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP540	6000 Order	3000+: $0.1279 6000+: $0.1197 15000+: $0.1114 30000+: $0.1056
PTFA091503ELV4R 250XTMA1-ND	PTFA091503ELV4R 250XTMA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
IRFR3411TRPBFTR -ND	IRFR3411TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	2000 Order	--
BFP620FH7764XTS A1TR-ND	BFP620FH7764XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.8V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain: 21dB ~ 10dB Power - Max: 185mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP Base Part Number: BFP620	1000 Order	3000+: $0.1213 6000+: $0.1135 15000+: $0.1056 30000+: $0.1002
BFR380FH6327XTS A1TR-ND	BFR380FH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz Gain: 9.5dB ~ 13.5dB Power - Max: 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BFR380	1000 Order	6000+: $0.05
BCR146FE6327-ND	BCR 146F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BCR146	1000 Order	1+: $0
BCR198FE6327-ND	BCR 198F E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3 Base Part Number: BCR198	1000 Order	1+: $0
BCR169SH6327XTS A1TR-ND	BCR169SH6327XTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	1000 Order	18000+: $0.0324
BC847SH6730XTMA 1-ND	BC847SH6730XTMA 1	Infineon Technologies	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	1000 Order	1+: $0
BCR148SH6827-ND	BCR 148S H6827	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BCR148S	1000 Order	1+: $0
IKCM15H60HAXKMA 1-ND	IKCM15H60HAXKMA 1	Infineon Technologies	View more Series: CIPOS Part Status: Active Type: IGBT Configuration: 3 Phase Current: 15A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 24-PowerDIP Module (1.028", 26.10mm)	249 Order	1+: $7.5411 10+: $6.8097
IRF7380QTRPBFCT -ND	IRF7380QTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 3.6A Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7380QPBF	1000 Order	1+: $0
IGB10N60TATMA1T R-ND	IGB10N60TATMA1	Infineon Technologies	View more Series: TrenchStop Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A Power - Max: 110W Switching Energy: 430J Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25C: 12ns/215ns Test Condition: 400V, 10A, 23 Ohm, 15V Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Base Part Number: 10N60	2000 Order	1000+: $0.4635 2000+: $0.4326 5000+: $0.412
IRG4PH50UPBF-ND	IRG4PH50UPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A Power - Max: 200W Switching Energy: 530J (on), 1.41mJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25C: 35ns/200ns Test Condition: 960V, 24A, 5 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	3992 Order	--
AUIRGPS4067D1-N D	AUIRGPS4067D1	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Last Time Buy Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A Power - Max: 750W Switching Energy: 8.2mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 360nC Td (on/off) @ 25C: 69ns/198ns Test Condition: 400V, 120A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 360ns Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: SUPER-247 (TO-274AA)	880 Order	1+: $10.0863 10+: $9.2717 100+: $7.8305
SPW24N60C3FKSA1 -ND	SPW24N60C3FKSA1	Infineon Technologies	View more Series: CoolMOS Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 24.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160 mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power Dissipation (Max): 240W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	249 Order	1+: $4.7754 10+: $4.2626 240+: $3.4952 720+: $2.8302 1200+: $2.387
IRF9362PBF-ND	IRF9362PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25A Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF9362PBF	1000 Order	--
IRLR3705ZPBF-ND	IRLR3705ZPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 3V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Power Dissipation (Max): 130W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	3791 Order	--
IRGB4620DPBF-ND	IRGB4620DPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75J (on), 225J (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25C: 31ns/83ns Test Condition: 400V, 12A, 22 Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AC	1000 Order	--
IPD65R1K4CFDBTM A1TR-ND	IPD65R1K4CFDBTM A1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 100V Power Dissipation (Max): 28.4W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2500+: $0.3294
IRFR6215TRLPBFT R-ND	IRFR6215TRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	3000 Order	3000+: $0.3854
IRF1104PBF-ND	IRF1104PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	2599 Order	--
BC857CWE6433HTM A1TR-ND	BC857CWE6433HTM A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3 Base Part Number: BC857	1000 Order	1+: $0
IGB50N65H5ATMA1 TR-ND	IGB50N65H5ATMA1	Infineon Technologies	View more Series: * Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant	1000 Order	--
IPN70R1K5CEATMA 1TR-ND	IPN70R1K5CEATMA 1	Infineon Technologies	View more Series: CoolMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 5W (Tc) Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	1000 Order	3000+: $0.1635
IRFH8337TRPBFTR -ND	IRFH8337TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16.2A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25A Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V Power Dissipation (Max): 3.2W (Ta), 27W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	--
IRGIB10B60KD1P- ND	IRGIB10B60KD1P	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 32A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 44W Switching Energy: 156J (on), 165J (off) Input Type: Standard Gate Charge: 41nC Td (on/off) @ 25C: 25ns/180ns Test Condition: 400V, 10A, 50 Ohm, 15V Reverse Recovery Time (trr): 79ns Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	2 Order	--
IRFS7437TRLPBFT R-ND	IRFS7437TRLPBF	Infineon Technologies	View more Series: HEXFET, StrongIRFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150A Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB Base Part Number: IRFS7437	20000 Order	--
BC817-25E6327IN TR-ND	BC 817-25 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 170MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BC817	1000 Order	1+: $0
IPB038N12N3GATM A1TR-ND	IPB038N12N3GATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 270A Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK (TO-263AB) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1000+: $2.1393
IPA105N15N3GXKS A1-ND	IPA105N15N3GXKS A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 4V @ 160A Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 75V Power Dissipation (Max): 40.5W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $3.4272 10+: $3.0574 100+: $2.5069 500+: $2.03 1000+: $1.712

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